Showing results 2 to 3 of 3
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Title | Author(s) | Issue Date | Views | |
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Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2021 | |||
Sub-0.5 nm interfacial dielectric enables superior electrostatics: 65 mV/dec top-gated carbon nanotube FETs at 15 nm Gate Length Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2020 | 1 |