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Browsing by Author Zheng, LX
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Showing results 1 to 16 of 16
Title
Author(s)
Issue Date
Views
Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces
Journal:
Physical Review B (Condensed Matter)
Zheng, LX
Xie, MH
Tong, SY
2000
219
Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy
Journal:
Physical Review Letters
Xie, MH
Seutter, SM
Zhu, WK
Zheng, LX
Wu, H
Tong, SY
1999
220
Beyond Spatial Correlation Effect in Micro-Raman Light Scattering: An Example of Zinc-blende GaN/GaAs Hetero-interface
Journal:
Journal of Applied Physics
Ning, J
Zheng, C
Zheng, LX
Xu, S
2015
50
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers
Journal:
Applied Physics Letters
Xu, SJ
Zheng, LX
Cheung, SH
Xie, MH
Tong, SY
Yang, H
2002
186
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
Journal:
Journal of Crystal Growth
Zheng, LX
Xie, MH
Xu, SJ
Cheung, SH
Tong, SY
2001
Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy
Journal:
Physica Status Solidi (A) Applied Research
Xu, SJ
Or, CT
Li, Q
Zheng, LX
Xie, MH
Tong, Y
Yang, H
2001
201
Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion
Journal:
Physical Review B (Condensed Matter)
Xu, SH
Wu, H
Dai, XQ
Lau, WP
Zheng, LX
Xie, MH
Tong, SY
2003
138
Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN
Journal:
Applied Physics Letters
Lu, XH
Yu, PY
Zheng, LX
Xu, SJ
Xie, MH
Tong, SY
2003
183
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates
Journal:
International Journal of Modern Physics B
Xie, MH
Cheung, SH
Zheng, LX
Tong, SY
Zhang, BS
Yang, H
2002
231
Initial stage of GaN growth and its implication to defect formation in films
Journal:
Physical Review B (Condensed Matter)
Cheung, SH
Zheng, LX
Xie, MH
Tong, SY
Ohtani, N
2001
114
A model for GaN 'ghost' islands
Journal:
Surface Science
Xie, MH
Zheng, LX
Dai, XQ
Wu, HS
Tong, SY
2004
160
Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy
Journal:
Physical Review Letters
Zheng, LX
Xie, MH
Seutter, SM
Cheung, SH
Tong, SY
2000
178
Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy
Journal:
Applied Physics Letters
Xie, MH
Zheng, LX
Cheung, SH
Ng, YF
Wu, H
Tong, SY
Ohtani, N
2000
273
Reflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxy
Journal:
Surface Science
Seutter, SM
Xie, MH
Zhu, WK
Zheng, LX
Wu, HS
Tong, SY
2000
233
Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy
Journal:
Physical Review B (Condensed Matter)
Xie, MH
Cheung, SH
Zheng, LX
Ng, YF
Wu, H
Ohtani, N
Tong, SY
2000
147
Surface morphology of GaN: Flat versus vicinal surfaces
Proceeding/Conference:
Materials Research Society Symposium - Proceedings
Xie, MH
Seutter, SM
Zheng, LX
Cheung, SH
Ng, YF
Wu, Huasheng
Tong, SY
2000
111
