Browsing by Author Cheng, YC

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TitleAuthor(s)Issue DateViews
 
2000
197
 
2007
 
1992
159
 
2000
173
 
An, FPBai, WDBalantekin, ABBishai, MBlyth, SCao, GFCao, JChang, JFChang, YChen, HSChen, HYChen, SMChen, YChen, YXCheng, JCheng, JCheng, YCCheng, ZKCherwinka, JJChu, MCCummings, JPDalager, ODeng, FSDing, YYDiwan, MVDohnal, TDolzhikov, DDove, JDugas, KVDuyang, HYDwyer, DAGallo, JPGonchar, MGong, GHGong, HGu, WQGuo, JYGuo, LGuo, XHGuo, YHGuo, ZHackenburg, RWHan, YHans, SHe, MHeeger, KMHeng, YKHor, YKHsiung, YBHu, BZHu, JRHu, THu, ZJHuang, HXHuang, JHHuang, XTHuang, YBHuber, PJaffe, DEJen, KLJi, XLJi, XPJohnson, RAJones, DKang, LKettell, SHKohn, SKramer, MLangford, TJLee, JLee, JHCLei, RTLeitner, RLeung, JKCLi, FLi, HLLi, JJLi, QJLi, RHLi, SLi, SCLi, WDLi, XNLi, XQLi, YFLi, ZBLiang, HLin, CJLin, GLLin, SLing, JJLink, JMLittenberg, LLittlejohn, BRLiu, JCLiu, JLLiu, JXLu, CLu, HQLuk, KBMa, BZMa, XBMa, XYMa, YQMandujano, RCMarshall, CMcDonald, KTMcKeown, RDMeng, YNapolitano, JNaumov, DNaumova, ENguyen, TMTOchoa-Ricoux, JPOlshevskiy, APark, JPatton, SPeng, JCPun, CSJQi, FZQi, MQian, XRaper, NRen, JReveco, CMRosero, RRoskovec, BRuan, XCRussell, BSteiner, HSun, JLTmej, TTreskov, KTse, WHTull, CETung, YCViren, BVorobel, VWang, CHWang, JWang, MWang, NYWang, RGWang, WWang, XWang, YWang, YFWang, ZWang, ZWang, ZMWei, HYWei, LHWen, LJWhisnant, KWhite, CGWong, HLHWorcester, EWu, DRWu, QWu, WJXia, DMXie, ZQXing, ZZXu, HKXu, JLXu, TXue, TYang, CGYang, LYang, YZYao, HFYe, MYeh, MYoung, BLYu, HZYu, ZYYue, BBZavadskyi, VZeng, SZeng, YZhan, LZhang, CZhang, FYZhang, HHZhang, JLZhang, JWZhang, QMZhang, SQZhang, XTZhang, YMZhang, YXZhang, YYZhang, ZJZhang, ZPZhang, ZYZhao, JZhao, RZZhou, LZhuang, HLZou, JH
22-May-2023
 
2000
195
 
Improvement of channel-current-induced gate-oxide breakdown in n-MOSFET's using rapid thermal nitridation
Proceeding/Conference:Proceedings of the 3rd International Conference on Solid State and Integrated Circuit Technology
1992
 
1992
 
1999
188
 
2007
 
2007
 
2008
155
 
Instability in GIDL current of thermally-nitrided-oxide n-MOSFET's
Proceeding/Conference:International Conference on VLSI and CAD Proceedings
1991
41
 
1997
116
 
2007
Interface properties of N2O-annealed NH3-treated 6H-SiC MOS capacitor
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
1999
119
 
2001
174
Interface properties of N2O-annealed SiO2/SiC system
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
2000
 
Interface properties of NO-annealed N2O-grown oxynitride
Journal:IEEE Transactions on Electron Devices
1999
147
 
1985
98