Browsing by Author Cheng, YC

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TitleAuthor(s)Issue DateViews
 
2000
178
 
2007
45
 
1992
149
 
2000
167
 
An, FPBai, WDBalantekin, ABBishai, MBlyth, SCao, GFCao, JChang, JFChang, YChen, HSChen, HYChen, SMChen, YChen, YXCheng, JCheng, JCheng, YCCheng, ZKCherwinka, JJChu, MCCummings, JPDalager, ODeng, FSDing, YYDiwan, MVDohnal, TDolzhikov, DDove, JDugas, KVDuyang, HYDwyer, DAGallo, JPGonchar, MGong, GHGong, HGu, WQGuo, JYGuo, LGuo, XHGuo, YHGuo, ZHackenburg, RWHan, YHans, SHe, MHeeger, KMHeng, YKHor, YKHsiung, YBHu, BZHu, JRHu, THu, ZJHuang, HXHuang, JHHuang, XTHuang, YBHuber, PJaffe, DEJen, KLJi, XLJi, XPJohnson, RAJones, DKang, LKettell, SHKohn, SKramer, MLangford, TJLee, JLee, JHCLei, RTLeitner, RLeung, JKCLi, FLi, HLLi, JJLi, QJLi, RHLi, SLi, SCLi, WDLi, XNLi, XQLi, YFLi, ZBLiang, HLin, CJLin, GLLin, SLing, JJLink, JMLittenberg, LLittlejohn, BRLiu, JCLiu, JLLiu, JXLu, CLu, HQLuk, KBMa, BZMa, XBMa, XYMa, YQMandujano, RCMarshall, CMcDonald, KTMcKeown, RDMeng, YNapolitano, JNaumov, DNaumova, ENguyen, TMTOchoa-Ricoux, JPOlshevskiy, APark, JPatton, SPeng, JCPun, CSJQi, FZQi, MQian, XRaper, NRen, JReveco, CMRosero, RRoskovec, BRuan, XCRussell, BSteiner, HSun, JLTmej, TTreskov, KTse, WHTull, CETung, YCViren, BVorobel, VWang, CHWang, JWang, MWang, NYWang, RGWang, WWang, XWang, YWang, YFWang, ZWang, ZWang, ZMWei, HYWei, LHWen, LJWhisnant, KWhite, CGWong, HLHWorcester, EWu, DRWu, QWu, WJXia, DMXie, ZQXing, ZZXu, HKXu, JLXu, TXue, TYang, CGYang, LYang, YZYao, HFYe, MYeh, MYoung, BLYu, HZYu, ZYYue, BBZavadskyi, VZeng, SZeng, YZhan, LZhang, CZhang, FYZhang, HHZhang, JLZhang, JWZhang, QMZhang, SQZhang, XTZhang, YMZhang, YXZhang, YYZhang, ZJZhang, ZPZhang, ZYZhao, JZhao, RZZhou, LZhuang, HLZou, JH
22-May-2023
 
2000
186
 
Improvement of channel-current-induced gate-oxide breakdown in n-MOSFET's using rapid thermal nitridation
Proceeding/Conference:Proceedings of the 3rd International Conference on Solid State and Integrated Circuit Technology
1992
34
 
1992
96
 
1999
180
 
2007
202
 
2007
94
 
2008
142
 
Instability in GIDL current of thermally-nitrided-oxide n-MOSFET's
Proceeding/Conference:International Conference on VLSI and CAD Proceedings
1991
35
 
1997
116
 
2007
108
Interface properties of N2O-annealed NH3-treated 6H-SiC MOS capacitor
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
1999
114
 
2001
167
Interface properties of N2O-annealed SiO2/SiC system
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
2000
116
 
Interface properties of NO-annealed N2O-grown oxynitride
Journal:IEEE Transactions on Electron Devices
1999
140
 
1985
98