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Conference Paper: Improved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing

TitleImproved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing
Authors
Issue Date2007
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
The 2007 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Tainan, Taiwan, 20-22 December 2007. In Conference Proceedings, 2007, p. 189-192 How to Cite?
AbstractOTFTs with HfTiO 2 as gate dielectric have been successfully fabricated. The devices show small threshold voltage and subthreshold slope, and thus are suitable for low-voltage and low-power applications. This work also finds that OTFT with gate dielectric annealed in N 2O has larger dielectric constant, smaller threshold voltage, smaller subthreshold slope and larger on/off ratio than the N 2-annealed sample. This demonstrates that the N 2O annealing is an important surface treatment for preparing a high-quality insulator/organic interface. © 2007 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/97159
References

 

DC FieldValueLanguage
dc.contributor.authorTang, WMen_HK
dc.contributor.authorCheng, KHen_HK
dc.contributor.authorLeung, CHen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, Jen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2010-09-25T16:58:36Z-
dc.date.available2010-09-25T16:58:36Z-
dc.date.issued2007en_HK
dc.identifier.citationThe 2007 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Tainan, Taiwan, 20-22 December 2007. In Conference Proceedings, 2007, p. 189-192en_HK
dc.identifier.urihttp://hdl.handle.net/10722/97159-
dc.description.abstractOTFTs with HfTiO 2 as gate dielectric have been successfully fabricated. The devices show small threshold voltage and subthreshold slope, and thus are suitable for low-voltage and low-power applications. This work also finds that OTFT with gate dielectric annealed in N 2O has larger dielectric constant, smaller threshold voltage, smaller subthreshold slope and larger on/off ratio than the N 2-annealed sample. This demonstrates that the N 2O annealing is an important surface treatment for preparing a high-quality insulator/organic interface. © 2007 IEEE.-
dc.languageengen_HK
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits (EDSSC)en_HK
dc.titleImproved performance for OTFT with HfTiO2 as gate dielectric by N2O annealingen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLeung, CH: chleung@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, J: jpxu@eee.hku.hken_HK
dc.identifier.emailChe, CM: cmche@hku.hken_HK
dc.identifier.authorityLeung, CH=rp00146en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, J=rp00197en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/EDSSC.2007.4450094-
dc.identifier.scopuseid_2-s2.0-43049165560-
dc.identifier.hkuros150350en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-43049165560&selection=ref&src=s&origin=recordpage-
dc.identifier.spage189en_HK
dc.identifier.epage192en_HK
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridTang, WM=24438163600-
dc.identifier.scopusauthoridCheng, KH=7402997820-
dc.identifier.scopusauthoridLeung, CH=7402612415-
dc.identifier.scopusauthoridLai, PT=7202946460-
dc.identifier.scopusauthoridXu, JP=35754128700-
dc.identifier.scopusauthoridChe, CM=7102442791-
dc.customcontrol.immutablesml 150924-

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