Showing results 1 to 3 of 3
| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Analysis of silicon dioxide interface transition region in MOS structures Proceeding/Conference:2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 | 2007 | 25 | ||
From ab initio properties of the Si-SiO2 interface, to electrical characteristics of metal-oxide-semiconductor devices Proceeding/Conference:Journal of Physics: Conference Series | 2010 | 20 | ||
On the sub-nm EOT scaling of high-κ gate stacks Proceeding/Conference:ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon | 2008 | 25 |