Showing results 1 to 3 of 3
Title | Author(s) | Issue Date | |
---|---|---|---|
LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications Journal:Applied Physics A: Materials Science and Processing | 2012 | ||
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric Journal:Applied Physics A: Materials Science and Processing | 2010 | ||
Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer Journal:Applied Physics A: Materials Science and Processing | 2010 |