Showing results 1 to 2 of 2
Title | Author(s) | Issue Date | |
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Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: A full-scale 3-D simulation scaling study Journal:IEEE Transactions on Electron Devices | 2011 | ||
Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants Journal:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007 |