Showing results 2 to 4 of 4
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Title | Author(s) | Issue Date | Views | |
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Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectric Journal:IEEE Electron Device Letters | 2001 | 3 | ||
Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane Journal:Journal of the Electrochemical Society | 2004 | 11 | ||
TDDB Reliability Improvement of Cu Damascene with a Bilayer-Structured α-SiC:H Dielectric Barrier Journal:Journal of the Electrochemical Society | 2004 | 7 |