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Article: Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectric
Title | Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectric |
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Authors | |
Keywords | Low-k dielectrics Frenkel-Poole (F-P) emission CVD oxides Copper Methylsilane Damascene structures Organosilicate glass (OSG) |
Issue Date | 2001 |
Citation | IEEE Electron Device Letters, 2001, v. 22, n. 6, p. 263-265 How to Cite? |
Abstract | This letter investigates the leakage mechanism in the Cu damascene structure with methylsilane-doped low-k CVD organosilicate glass (OSG) as the intermetal dielectric (IMD). The leakage between Cu lines was found to be dominated by the Frenkel-Poole (F-P) emission in OSG for the structure using a 50-nm SiC etching stop layer (ESL). In the structure using a 50-nm SiN ESL, the leakage component through SiN also made a considerable contribution to the total leakage in addition to the bulk leakage from trapped electrons in OSG. An appropriate ESL of sufficient thickness is essential to reduce the leakage through the ESL if an ESL is used in the Cu damascene integration scheme. |
Persistent Identifier | http://hdl.handle.net/10722/298001 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
DC Field | Value | Language |
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dc.contributor.author | Wu, Zhen Cheng | - |
dc.contributor.author | Chiang, Chiu Chih | - |
dc.contributor.author | Wu, Wei Hao | - |
dc.contributor.author | Chen, Mao Chieh | - |
dc.contributor.author | Jeng, Shwang Ming | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Jang, Syun Ming | - |
dc.contributor.author | Yu, Chen Hua | - |
dc.contributor.author | Liang, Mong Song | - |
dc.date.accessioned | 2021-04-08T03:07:26Z | - |
dc.date.available | 2021-04-08T03:07:26Z | - |
dc.date.issued | 2001 | - |
dc.identifier.citation | IEEE Electron Device Letters, 2001, v. 22, n. 6, p. 263-265 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298001 | - |
dc.description.abstract | This letter investigates the leakage mechanism in the Cu damascene structure with methylsilane-doped low-k CVD organosilicate glass (OSG) as the intermetal dielectric (IMD). The leakage between Cu lines was found to be dominated by the Frenkel-Poole (F-P) emission in OSG for the structure using a 50-nm SiC etching stop layer (ESL). In the structure using a 50-nm SiN ESL, the leakage component through SiN also made a considerable contribution to the total leakage in addition to the bulk leakage from trapped electrons in OSG. An appropriate ESL of sufficient thickness is essential to reduce the leakage through the ESL if an ESL is used in the Cu damascene integration scheme. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.subject | Low-k dielectrics | - |
dc.subject | Frenkel-Poole (F-P) emission | - |
dc.subject | CVD oxides | - |
dc.subject | Copper | - |
dc.subject | Methylsilane | - |
dc.subject | Damascene structures | - |
dc.subject | Organosilicate glass (OSG) | - |
dc.title | Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectric | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/55.924836 | - |
dc.identifier.scopus | eid_2-s2.0-0035362458 | - |
dc.identifier.volume | 22 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | 263 | - |
dc.identifier.epage | 265 | - |
dc.identifier.issnl | 0741-3106 | - |