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Article: Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane
Title | Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane |
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Authors | |
Issue Date | 2004 |
Citation | Journal of the Electrochemical Society, 2004, v. 151, n. 9, p. G612-G617 How to Cite? |
Abstract | This work investigates the thermal stability and physical and barrier properties for three species of amorphous silicon-oxycarbide (α-SiCO) dielectric barrier films, deposited by plasma-enhanced chemical vapor deposition (PECVD), to copper (Cu) diffusion using octamethylcyclotetrasiloxane precursor and helium (He) carrier gas with and without oxygen (O ) reaction gas. The α-SiCO dielectric barrier film deposited by PECVD without O reaction gas exhibits a low k-value of 2.8, thermally stable at temperatures up to 550°C, excellent moisture resistance, and superb Cu barrier property until 400°C. With the addition of O reaction gas during the dielectric deposition process, the dielectric constant of the α-SiCO dielectric barrier films increases with increasing flow rate of O reaction gas. Increasing flow rate of O reaction gas during the deposition of the α-SiCO dielectric barrier films also degrades the thermal stability and moisture resistance of the dielectric barrier films. Moreover, the addition of O reaction gas also results in a degraded Cu barrier property of dielectric films. © 2004 The Electrochemical Society. All rights reserved. 2 2 2 2 2 2 |
Persistent Identifier | http://hdl.handle.net/10722/298454 |
ISSN | 2021 Impact Factor: 4.386 2020 SCImago Journal Rankings: 1.258 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chiang, Chiu Chih | - |
dc.contributor.author | Chen, Mao Chieh | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Wu, Zhen Cheng | - |
dc.contributor.author | Jang, Syun Ming | - |
dc.contributor.author | Liang, Mong Song | - |
dc.date.accessioned | 2021-04-08T03:08:27Z | - |
dc.date.available | 2021-04-08T03:08:27Z | - |
dc.date.issued | 2004 | - |
dc.identifier.citation | Journal of the Electrochemical Society, 2004, v. 151, n. 9, p. G612-G617 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298454 | - |
dc.description.abstract | This work investigates the thermal stability and physical and barrier properties for three species of amorphous silicon-oxycarbide (α-SiCO) dielectric barrier films, deposited by plasma-enhanced chemical vapor deposition (PECVD), to copper (Cu) diffusion using octamethylcyclotetrasiloxane precursor and helium (He) carrier gas with and without oxygen (O ) reaction gas. The α-SiCO dielectric barrier film deposited by PECVD without O reaction gas exhibits a low k-value of 2.8, thermally stable at temperatures up to 550°C, excellent moisture resistance, and superb Cu barrier property until 400°C. With the addition of O reaction gas during the dielectric deposition process, the dielectric constant of the α-SiCO dielectric barrier films increases with increasing flow rate of O reaction gas. Increasing flow rate of O reaction gas during the deposition of the α-SiCO dielectric barrier films also degrades the thermal stability and moisture resistance of the dielectric barrier films. Moreover, the addition of O reaction gas also results in a degraded Cu barrier property of dielectric films. © 2004 The Electrochemical Society. All rights reserved. 2 2 2 2 2 2 | - |
dc.language | eng | - |
dc.relation.ispartof | Journal of the Electrochemical Society | - |
dc.title | Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1149/1.1778169 | - |
dc.identifier.scopus | eid_2-s2.0-4944235009 | - |
dc.identifier.volume | 151 | - |
dc.identifier.issue | 9 | - |
dc.identifier.spage | G612 | - |
dc.identifier.epage | G617 | - |
dc.identifier.isi | WOS:000223622000074 | - |
dc.identifier.issnl | 0013-4651 | - |