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Conference Paper: SPM characterization of chemically and electrochemically etched p-silicon

TitleSPM characterization of chemically and electrochemically etched p-silicon
Authors
Issue Date1997
Citation
The 1997 Joint International Meeting of The Electrochemical Society (192nd Meeting) and The International Society of Electrochemistry (48th Annual Meeting), Paris, August 31 - September 5, v. 97 n. 2, p. Abstract No. 22 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/97578

 

DC FieldValueLanguage
dc.contributor.authorYu, KFen_HK
dc.contributor.authorChi, Nen_HK
dc.contributor.authorChan, GKYen_HK
dc.contributor.authorPhillips, DLen_HK
dc.date.accessioned2010-09-25T17:14:15Z-
dc.date.available2010-09-25T17:14:15Z-
dc.date.issued1997en_HK
dc.identifier.citationThe 1997 Joint International Meeting of The Electrochemical Society (192nd Meeting) and The International Society of Electrochemistry (48th Annual Meeting), Paris, August 31 - September 5, v. 97 n. 2, p. Abstract No. 22en_HK
dc.identifier.urihttp://hdl.handle.net/10722/97578-
dc.languageengen_HK
dc.relation.ispartofThe 1997 Joint International Meeting of The Electrochemical Society (192nd Meeting) and The International Society of Electrochemistry (48th Annual Meeting), Paris, August 31 - September 5en_HK
dc.titleSPM characterization of chemically and electrochemically etched p-siliconen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailChan, GKY: hrsccky@hku.hken_HK
dc.identifier.emailPhillips, DL: phillips@hku.hken_HK
dc.identifier.authorityChan, GKY=rp00662en_HK
dc.identifier.authorityPhillips, DL=rp00770en_HK
dc.identifier.hkuros31722en_HK
dc.identifier.volume, v. 97 n. 2en_HK
dc.identifier.issue2en_HK

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