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Article: 40 GHz compact TFMS meander-line bandpass filter on silicon substrate

Title40 GHz compact TFMS meander-line bandpass filter on silicon substrate
Authors
Sun, SShi, JZhu, LRustagi, SCKang, KMouthaan, K
KeywordsCmos Integrated Circuits
Millimeter Wave Devices
Resonators
Silicon
Thin Films
Issue Date2007
PublisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/EL
Citation
Electronics Letters, 2007, v. 43 n. 25, p. 1433-1434 How to Cite?
DOI: http://dx.doi.org/10.1049/el:20072970
AbstractPresented is a compact millimetre-wave bandpass filter using a thin-film microstrip meander line on standard 0.18 μm CMOS silicon substrate without any post-processing step yet still reducing the substrate loss and crosstalk to a large extent. To miniaturise overall circuit size, a half-wavelength resonator is constructed in meander-line configuration and its resonant frequency is designed to be 40 GHz. The prototype single-resonator bandpass filter occupies a circuit area of 210×210μm on silicon. Measured insertion loss is 2.5 dB, which agrees well with the design value in the simulations. © The Institution of Engineering and Technology 2007.
Persistent Identifierhttp://hdl.handle.net/10722/92858
ISSN
0013-5194
2023 Impact Factor: 0.7
2023 SCImago Journal Rankings: 0.323
ISI Accession Number ID
WOS:000252315600023
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorSun, Sen_HK
dc.contributor.authorShi, Jen_HK
dc.contributor.authorZhu, Len_HK
dc.contributor.authorRustagi, SCen_HK
dc.contributor.authorKang, Ken_HK
dc.contributor.authorMouthaan, Ken_HK
dc.date.accessioned2010-09-22T05:01:45Z-
dc.date.available2010-09-22T05:01:45Z-
dc.date.issued2007en_HK
dc.identifier.citationElectronics Letters, 2007, v. 43 n. 25, p. 1433-1434en_HK
dc.identifier.issn0013-5194en_HK
dc.identifier.urihttp://hdl.handle.net/10722/92858-
dc.description.abstractPresented is a compact millimetre-wave bandpass filter using a thin-film microstrip meander line on standard 0.18 μm CMOS silicon substrate without any post-processing step yet still reducing the substrate loss and crosstalk to a large extent. To miniaturise overall circuit size, a half-wavelength resonator is constructed in meander-line configuration and its resonant frequency is designed to be 40 GHz. The prototype single-resonator bandpass filter occupies a circuit area of 210×210μm on silicon. Measured insertion loss is 2.5 dB, which agrees well with the design value in the simulations. © The Institution of Engineering and Technology 2007.en_HK
dc.languageengen_HK
dc.publisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/ELen_HK
dc.relation.ispartofElectronics Lettersen_HK
dc.subjectCmos Integrated Circuitsen_HK
dc.subjectMillimeter Wave Devicesen_HK
dc.subjectResonatorsen_HK
dc.subjectSiliconen_HK
dc.subjectThin Filmsen_HK
dc.title40 GHz compact TFMS meander-line bandpass filter on silicon substrateen_HK
dc.typeArticleen_HK
dc.identifier.emailSun, S:sunsheng@hku.hken_HK
dc.identifier.authoritySun, S=rp01431en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1049/el:20072970en_HK
dc.identifier.scopuseid_2-s2.0-36949005614en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-36949005614&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume43en_HK
dc.identifier.issue25en_HK
dc.identifier.spage1433en_HK
dc.identifier.epage1434en_HK
dc.identifier.isiWOS:000252315600023-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridSun, S=7404509453en_HK
dc.identifier.scopusauthoridShi, J=7404494665en_HK
dc.identifier.scopusauthoridZhu, L=7404201926en_HK
dc.identifier.scopusauthoridRustagi, SC=6701386088en_HK
dc.identifier.scopusauthoridKang, K=25027760800en_HK
dc.identifier.scopusauthoridMouthaan, K=15753835900en_HK
dc.identifier.issnl0013-5194-

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