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Article: Transport and magnetic properties of disordered LixVyO2 (x=0.8 and y=0.8)

TitleTransport and magnetic properties of disordered LixVyO2 (x=0.8 and y=0.8)
Authors
Du, FLi, ALiu, DZhan, SHu, FWang, CChen, YFeng, SChen, G
KeywordsAnderson Localization
Disorder Solid
Electron Transport Property
Pauli Paramagnetism
Variable-Range Hopping
Issue Date2009
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jmmm
Citation
Journal of Magnetism and Magnetic Materials, 2009, v. 321 n. 13, p. 1975-1979 How to Cite?
DOI: http://dx.doi.org/10.1016/j.jmmm.2008.12.018
AbstractThe magnetic and electron transport properties of rhombohedral LixVyO2 (x=0.8 and y=0.8) are studied. The dc susceptibility of LixVyO2 can be well fitted to the modified Curie-Weiss law, which verified the paramagnetic ground state. The magnetic hysteresis and ac susceptibility also confirm this paramagnetism. The LixVyO2 exhibits semiconducting behavior, which is explained by thermal activated process at high temperature and variable-range hopping mechanism at low temperature. Anderson localization plays an important role in both the electron transport behavior and the magnetic behavior due to the site disorder between the Li+ ion and V4+ ion. © 2008 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/92085
ISSN
0304-8853
2021 Impact Factor: 3.097
2020 SCImago Journal Rankings: 0.665
ISI Accession Number ID
WOS:000265427200015
Funding AgencyGrant Number
Chinese National Science Foundation50672031
Ministry of Education10411
Special Funds2002CB211802
Program for Changjiang Scholar and Innovative Research Team in UniversityIRT0625
Funding Information:

This work was sponsored by the Chinese National Science Foundation under Grant no. 50672031; a component part of Key Project 10411 from the Ministry of Education; the Special Funds for Major State Basic Research Project of China under Grant no. 2002CB211802 and Program for Changjiang Scholar and Innovative Research Team in University (IRT0625).

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorDu, Fen_HK
dc.contributor.authorLi, Aen_HK
dc.contributor.authorLiu, Den_HK
dc.contributor.authorZhan, Sen_HK
dc.contributor.authorHu, Fen_HK
dc.contributor.authorWang, Cen_HK
dc.contributor.authorChen, Yen_HK
dc.contributor.authorFeng, Sen_HK
dc.contributor.authorChen, Gen_HK
dc.date.accessioned2010-09-17T10:35:38Z-
dc.date.available2010-09-17T10:35:38Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal of Magnetism and Magnetic Materials, 2009, v. 321 n. 13, p. 1975-1979en_HK
dc.identifier.issn0304-8853en_HK
dc.identifier.urihttp://hdl.handle.net/10722/92085-
dc.description.abstractThe magnetic and electron transport properties of rhombohedral LixVyO2 (x=0.8 and y=0.8) are studied. The dc susceptibility of LixVyO2 can be well fitted to the modified Curie-Weiss law, which verified the paramagnetic ground state. The magnetic hysteresis and ac susceptibility also confirm this paramagnetism. The LixVyO2 exhibits semiconducting behavior, which is explained by thermal activated process at high temperature and variable-range hopping mechanism at low temperature. Anderson localization plays an important role in both the electron transport behavior and the magnetic behavior due to the site disorder between the Li+ ion and V4+ ion. © 2008 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jmmmen_HK
dc.relation.ispartofJournal of Magnetism and Magnetic Materialsen_HK
dc.subjectAnderson Localizationen_HK
dc.subjectDisorder Soliden_HK
dc.subjectElectron Transport Propertyen_HK
dc.subjectPauli Paramagnetismen_HK
dc.subjectVariable-Range Hoppingen_HK
dc.titleTransport and magnetic properties of disordered LixVyO2 (x=0.8 and y=0.8)en_HK
dc.typeArticleen_HK
dc.identifier.emailChen, Y:ychenc@hkucc.hku.hken_HK
dc.identifier.authorityChen, Y=rp1318en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.jmmm.2008.12.018en_HK
dc.identifier.scopuseid_2-s2.0-64749094339en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-64749094339&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume321en_HK
dc.identifier.issue13en_HK
dc.identifier.spage1975en_HK
dc.identifier.epage1979en_HK
dc.identifier.isiWOS:000265427200015-
dc.identifier.issnl0304-8853-

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