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Conference Paper: Development of specifications for an integrated piezoelectric wafer active sensors system

TitleDevelopment of specifications for an integrated piezoelectric wafer active sensors system
Authors
KeywordsCracks
Damage Detection
Envelope Extraction, Nondestructive Evaluation
Lamb Waves
Nde
Piezoelectric
Piezoelectric Wafer Active Sensor
Pwas
Shm
Structural Health Monitoring
Ultrasonic
Issue Date2005
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, San Diego, CA, 7-10 March 2005. In Proceedings of SPIE - The International Society for Optical Engineering, 2005, v. 5764, p. 509-521 How to Cite?
AbstractThis paper describes work performed in the development of a set of specification for the construction of an integrated electronic system for piezoelectric wafer active sensor (PWAS). The paper starts with a comprehensive review of the PWAS material properties, dimensions, and electrical characteristics. PWAS of various shapes and sizes are considered. Two boundary conditions were examined: free PWAS and PWAS attached to actual structures. For both, the PWAS immittance and the allowable dc and ac voltages were considered. The predicted values were compared with measurements performed over a wide frequency range (10 kHz to 2 MHz). Next, the electronic-equipment specifications were considered. The PWAS can be used in a number of different ways to actively detect damage in structures. Our aim was to develop electronic-equipment specifications that would extract the optimum performance from the PWAS, i.e., maximize the coupling with the structure and obtain large-amplitude Lamb wave transmission and reception. Analytical predictions were compared with measurements made using current laboratory equipment. The comparative analysis revealed that the current electronic equipment does not fully exploit the PWAS capabilities. Hence, the PWAS equipment specifications were divided into two categories: "existing" and "desired". The former category designates integrated electronic equipment that would offer the same PWAS performance as the existing lab equipment, but be of a lower volume/weight/cost. The latter category refers to advanced electronic equipment that will exploit the full potential of PWAS transducers while being of lower volume/weight/cost than the lab equipment. Both categories are presented and discussed in the paper.
Persistent Identifierhttp://hdl.handle.net/10722/91086
ISSN
2023 SCImago Journal Rankings: 0.152
References

 

DC FieldValueLanguage
dc.contributor.authorJenkins, Cen_HK
dc.contributor.authorGiurgiutiu, Ven_HK
dc.contributor.authorLin, Ben_HK
dc.contributor.authorLiu, Wen_HK
dc.date.accessioned2010-09-17T10:12:49Z-
dc.date.available2010-09-17T10:12:49Z-
dc.date.issued2005en_HK
dc.identifier.citationSPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, San Diego, CA, 7-10 March 2005. In Proceedings of SPIE - The International Society for Optical Engineering, 2005, v. 5764, p. 509-521en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/91086-
dc.description.abstractThis paper describes work performed in the development of a set of specification for the construction of an integrated electronic system for piezoelectric wafer active sensor (PWAS). The paper starts with a comprehensive review of the PWAS material properties, dimensions, and electrical characteristics. PWAS of various shapes and sizes are considered. Two boundary conditions were examined: free PWAS and PWAS attached to actual structures. For both, the PWAS immittance and the allowable dc and ac voltages were considered. The predicted values were compared with measurements performed over a wide frequency range (10 kHz to 2 MHz). Next, the electronic-equipment specifications were considered. The PWAS can be used in a number of different ways to actively detect damage in structures. Our aim was to develop electronic-equipment specifications that would extract the optimum performance from the PWAS, i.e., maximize the coupling with the structure and obtain large-amplitude Lamb wave transmission and reception. Analytical predictions were compared with measurements made using current laboratory equipment. The comparative analysis revealed that the current electronic equipment does not fully exploit the PWAS capabilities. Hence, the PWAS equipment specifications were divided into two categories: "existing" and "desired". The former category designates integrated electronic equipment that would offer the same PWAS performance as the existing lab equipment, but be of a lower volume/weight/cost. The latter category refers to advanced electronic equipment that will exploit the full potential of PWAS transducers while being of lower volume/weight/cost than the lab equipment. Both categories are presented and discussed in the paper.en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.subjectCracksen_HK
dc.subjectDamage Detectionen_HK
dc.subjectEnvelope Extraction, Nondestructive Evaluationen_HK
dc.subjectLamb Wavesen_HK
dc.subjectNdeen_HK
dc.subjectPiezoelectricen_HK
dc.subjectPiezoelectric Wafer Active Sensoren_HK
dc.subjectPwasen_HK
dc.subjectShmen_HK
dc.subjectStructural Health Monitoringen_HK
dc.subjectUltrasonicen_HK
dc.titleDevelopment of specifications for an integrated piezoelectric wafer active sensors systemen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLin, B:blin@hku.hken_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1117/12.599877en_HK
dc.identifier.scopuseid_2-s2.0-25144452503en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-25144452503&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume5764en_HK
dc.identifier.spage509en_HK
dc.identifier.epage521en_HK
dc.identifier.issnl0277-786X-

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