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Article: Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation

TitleElectron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation
Authors
Ling, CCChen, XDGong, MYang, CLGe, WKWang, JN
KeywordsAlphabet lines
Electron irradiation
Photoluminescence
Silicon carbide
Issue Date2006
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physb
Citation
Physica B: Condensed Matter, 2006, v. 376-377 n. 1, p. 374-377 How to Cite?
DOI: http://dx.doi.org/10.1016/j.physb.2005.12.095
Abstract6H n-type silicon carbide (SiC) samples were irradiated with electrons having energies of 0.2, 0.3, 0.5 and 1.7 MeV and photoluminescence measurements were conducted to study the defects created. The so-called alphabet line (EA) spectrum was created by electron irradiation with electron energy Ee≥0.3MeV. By considering the energy required to displace the C atom and the Si atom in the lattice, the creation of these lines by electron irradiation is associated with the C atom displacement. The process of the introduction of DI by annealing was studied and was found to be different for the 0.3 and the 1.7 MeV electron-irradiated sample. Formation mechanisms for the EA and the DI related centers were discussed. © 2005 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/81000
ISSN
0921-4526
2021 Impact Factor: 2.988
2020 SCImago Journal Rankings: 0.485
ISI Accession Number ID
WOS:000237329500093
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorYang, CLen_HK
dc.contributor.authorGe, WKen_HK
dc.contributor.authorWang, JNen_HK
dc.date.accessioned2010-09-06T08:12:38Z-
dc.date.available2010-09-06T08:12:38Z-
dc.date.issued2006en_HK
dc.identifier.citationPhysica B: Condensed Matter, 2006, v. 376-377 n. 1, p. 374-377en_HK
dc.identifier.issn0921-4526en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81000-
dc.description.abstract6H n-type silicon carbide (SiC) samples were irradiated with electrons having energies of 0.2, 0.3, 0.5 and 1.7 MeV and photoluminescence measurements were conducted to study the defects created. The so-called alphabet line (EA) spectrum was created by electron irradiation with electron energy Ee≥0.3MeV. By considering the energy required to displace the C atom and the Si atom in the lattice, the creation of these lines by electron irradiation is associated with the C atom displacement. The process of the introduction of DI by annealing was studied and was found to be different for the 0.3 and the 1.7 MeV electron-irradiated sample. Formation mechanisms for the EA and the DI related centers were discussed. © 2005 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physben_HK
dc.relation.ispartofPhysica B: Condensed Matteren_HK
dc.rightsPhysica B: Condensed Matter. Copyright © Elsevier BV.en_HK
dc.subjectAlphabet linesen_HK
dc.subjectElectron irradiationen_HK
dc.subjectPhotoluminescenceen_HK
dc.subjectSilicon carbideen_HK
dc.titleElectron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0921-4526&volume=376-377&spage=374&epage=377&date=2006&atitle=Electron+energy+dependence+on+inducing+the+photoluminescence+lines+of+6H-SiC+by+electron+irradiationen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailYang, CL: yangchl@HKUCC.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityYang, CL=rp00824en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.physb.2005.12.095en_HK
dc.identifier.scopuseid_2-s2.0-33645225623en_HK
dc.identifier.hkuros115063en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33645225623&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume376-377en_HK
dc.identifier.issue1en_HK
dc.identifier.spage374en_HK
dc.identifier.epage377en_HK
dc.identifier.isiWOS:000237329500093-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridYang, CL=7407022337en_HK
dc.identifier.scopusauthoridGe, WK=7103160307en_HK
dc.identifier.scopusauthoridWang, JN=7701333904en_HK
dc.identifier.issnl0921-4526-

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