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Article: Film thickness degradation of Au/GaN Schottky contact characteristics
Title | Film thickness degradation of Au/GaN Schottky contact characteristics |
---|---|
Authors | |
Keywords | Diffusion GaN Gold Schottky barrier |
Issue Date | 2005 |
Publisher | Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseb |
Citation | Materials Science And Engineering B: Solid-State Materials For Advanced Technology, 2005, v. 117 n. 1, p. 21-25 How to Cite? |
Abstract | Electrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300 Å, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin (<500 Å) film Schottky diodes show significantly better rectification characteristics than those of thick Au films (>500 Å). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown. © 2004 Elsevier B.V. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/80964 |
ISSN | 2023 Impact Factor: 3.9 2023 SCImago Journal Rankings: 0.647 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, K | en_HK |
dc.contributor.author | Wang, RX | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Chen, XD | en_HK |
dc.contributor.author | Huang, Y | en_HK |
dc.contributor.author | Li, S | en_HK |
dc.contributor.author | Xu, SJ | en_HK |
dc.contributor.author | Gong, M | en_HK |
dc.date.accessioned | 2010-09-06T08:12:14Z | - |
dc.date.available | 2010-09-06T08:12:14Z | - |
dc.date.issued | 2005 | en_HK |
dc.identifier.citation | Materials Science And Engineering B: Solid-State Materials For Advanced Technology, 2005, v. 117 n. 1, p. 21-25 | en_HK |
dc.identifier.issn | 0921-5107 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/80964 | - |
dc.description.abstract | Electrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300 Å, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin (<500 Å) film Schottky diodes show significantly better rectification characteristics than those of thick Au films (>500 Å). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown. © 2004 Elsevier B.V. All rights reserved. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseb | en_HK |
dc.relation.ispartof | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | en_HK |
dc.subject | Diffusion | en_HK |
dc.subject | GaN | en_HK |
dc.subject | Gold | en_HK |
dc.subject | Schottky barrier | en_HK |
dc.title | Film thickness degradation of Au/GaN Schottky contact characteristics | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0921-5093&volume=117&spage=21&epage=25&date=2005&atitle=Film+thickness+degradation+of+Au/GaN+Schottky+contact+characteristics | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.email | Xu, SJ: sjxu@hku.hk | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.identifier.authority | Xu, SJ=rp00821 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.mseb.2004.10.011 | en_HK |
dc.identifier.scopus | eid_2-s2.0-12344307384 | en_HK |
dc.identifier.hkuros | 97369 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-12344307384&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 117 | en_HK |
dc.identifier.issue | 1 | en_HK |
dc.identifier.spage | 21 | en_HK |
dc.identifier.epage | 25 | en_HK |
dc.identifier.isi | WOS:000227163500005 | - |
dc.publisher.place | Switzerland | en_HK |
dc.identifier.scopusauthorid | Wang, K=7501396674 | en_HK |
dc.identifier.scopusauthorid | Wang, RX=7405339075 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.scopusauthorid | Chen, XD=26642908200 | en_HK |
dc.identifier.scopusauthorid | Huang, Y=26643004400 | en_HK |
dc.identifier.scopusauthorid | Li, S=7409241368 | en_HK |
dc.identifier.scopusauthorid | Xu, SJ=7404439005 | en_HK |
dc.identifier.scopusauthorid | Gong, M=9273057400 | en_HK |
dc.identifier.citeulike | 5124777 | - |
dc.identifier.issnl | 0921-5107 | - |