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Article: Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC

TitlePrimary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC
Authors
Zhong, ZQWu, DXGong, MWang, OShi, SLXu, SJChen, XDLing, CCFung, SBeling, CDBrauer, GAnwand, WSkorupa, W
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2006, v. 99 n. 9, article no. 093511 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2195014
AbstractLow-temperature photoluminescence spectroscopy has revealed a series of features labeled S1, S2, S3 in n -type 6H-SiC after neutron and electron irradiation. Thermal annealing studies showed that the defects S1, S2, S3 disappeared at 500 °C. However, the well-known D1 center was only detected for annealing temperatures over 700 °C. This experimental observation not only indicated that the defects S1, S2, S3 were a set of primary defects and the D1 center was a kind of secondary defect, but also showed that the D1 center and the E1, E2 observed using deep level transient spectroscopy might not be the same type of defects arising from the same physical origin. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80887
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000237682900031
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhong, ZQen_HK
dc.contributor.authorWu, DXen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorWang, Oen_HK
dc.contributor.authorShi, SLen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.date.accessioned2010-09-06T08:11:22Z-
dc.date.available2010-09-06T08:11:22Z-
dc.date.issued2006en_HK
dc.identifier.citationJournal of Applied Physics, 2006, v. 99 n. 9, article no. 093511-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80887-
dc.description.abstractLow-temperature photoluminescence spectroscopy has revealed a series of features labeled S1, S2, S3 in n -type 6H-SiC after neutron and electron irradiation. Thermal annealing studies showed that the defects S1, S2, S3 disappeared at 500 °C. However, the well-known D1 center was only detected for annealing temperatures over 700 °C. This experimental observation not only indicated that the defects S1, S2, S3 were a set of primary defects and the D1 center was a kind of secondary defect, but also showed that the D1 center and the E1, E2 observed using deep level transient spectroscopy might not be the same type of defects arising from the same physical origin. © 2006 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2006, v. 99 n. 9, article no. 093511 and may be found at https://doi.org/10.1063/1.2195014-
dc.titlePrimary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiCen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=99&spage=093511: 1&epage=3&date=2006&atitle=Primary+photoluminescence+in+as-neutron+(electron)+–irradiated+n-type+6H-SiCen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2195014en_HK
dc.identifier.scopuseid_2-s2.0-33646894461en_HK
dc.identifier.hkuros115807en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33646894461&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume99en_HK
dc.identifier.issue9en_HK
dc.identifier.spagearticle no. 093511-
dc.identifier.epagearticle no. 093511-
dc.identifier.isiWOS:000237682900031-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhong, ZQ=8304932300en_HK
dc.identifier.scopusauthoridWu, DX=23981312300en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridWang, O=13611875800en_HK
dc.identifier.scopusauthoridShi, SL=9532439000en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridChen, XD=15031490600en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.issnl0021-8979-

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