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Article: Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film

TitleQuenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film
Authors
Cen, ZHChen, TPDing, LLiu, YLiu, ZYang, MWong, JIGoh, WPZhu, FRFung, S
KeywordsCharge trapping
Electroluminescence quenching
Reactivation
Si-implanted silicon nitride
Issue Date2009
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 2009, v. 56 n. 12, p. 3212-3217 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2009.2033009
AbstractIn this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120 °C or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices. © 2009 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/80664
ISSN
0018-9383
2021 Impact Factor: 3.221
2020 SCImago Journal Rankings: 0.828
ISI Accession Number ID
WOS:000271951700043
Funding AgencyGrant Number
National Research Foundation of SingaporeNRF-G-CRP 2007-01
NSFC60806040
Funding Information:

Manuscript received July 2, 2009; revised August 26, 2009. First published October 23, 2009; current version published November 20, 2009. This work was supported by the National Research Foundation of Singapore under Project NRF-G-CRP 2007-01. The work of Y. Liu was supported by NSFC under Project 60806040. The review of this brief was arranged by Editor L. Lunardi.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorCen, ZHen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorLiu, Zen_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorGoh, WPen_HK
dc.contributor.authorZhu, FRen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:08:56Z-
dc.date.available2010-09-06T08:08:56Z-
dc.date.issued2009en_HK
dc.identifier.citationIeee Transactions On Electron Devices, 2009, v. 56 n. 12, p. 3212-3217en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80664-
dc.description.abstractIn this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120 °C or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices. © 2009 IEEE.en_HK
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_HK
dc.relation.ispartofIEEE Transactions on Electron Devicesen_HK
dc.rights©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectCharge trappingen_HK
dc.subjectElectroluminescence quenchingen_HK
dc.subjectReactivationen_HK
dc.subjectSi-implanted silicon nitrideen_HK
dc.titleQuenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin filmen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=56&issue=12&spage=3212&epage=3217&date=2009&atitle=Quenching+and+reactivation+of+electroluminescence+by+charge+trapping+and+detrapping+in+Si-implanted+silicon+nitride+thin+filmen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TED.2009.2033009en_HK
dc.identifier.scopuseid_2-s2.0-79959198293en_HK
dc.identifier.hkuros169430en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79959198293&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume56en_HK
dc.identifier.issue12en_HK
dc.identifier.spage3212en_HK
dc.identifier.epage3217en_HK
dc.identifier.isiWOS:000271951700043-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridCen, ZH=23098969400en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridLiu, Z=7406680497en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridGoh, WP=26025931500en_HK
dc.identifier.scopusauthoridZhu, FR=7202254675en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0018-9383-

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