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Article: X-ray diffraction analysis on gallium-indium interdiffusion in quantum dot superlattices
Title | X-ray diffraction analysis on gallium-indium interdiffusion in quantum dot superlattices |
---|---|
Authors | |
Issue Date | 2001 |
Publisher | Zhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL |
Citation | Chinese Physics Letters, 2001, v. 18 n. 6, p. 810-812 How to Cite? |
Abstract | Thermal-induced interdiffusion in InAs/GaAs quantum dot superlattices is studied by high-resolution x-ray diffraction rocking curve and photoluminescence techniques. With increasing annealing temperatures, up to 300 meV a blueshift of the emission peak position and down to 16.6 meV a narrowing of the line width are found in the photoluminescence spectra, and respective intensity of the higher-order satellite peaks to lower-order ones in the x-ray rocking curves decreases. Dynamical theory is employed to simulate the measured x-ray diffraction data. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness and stress variations caused by interdiffusion are taken into account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The estimated diffusion coefficient is 1.8 × 10-17 cm2·s-1 at 650°C, 3.2 × 10-17 cm2·s-1 at 750°C, and 1.2 × 10-14 cm2·s-1 at 850°C. |
Persistent Identifier | http://hdl.handle.net/10722/80626 |
ISSN | 2021 Impact Factor: 2.293 2020 SCImago Journal Rankings: 0.348 |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, H | en_HK |
dc.contributor.author | Xu, SJ | en_HK |
dc.contributor.author | Li, Q | en_HK |
dc.contributor.author | Feng, SL | en_HK |
dc.date.accessioned | 2010-09-06T08:08:31Z | - |
dc.date.available | 2010-09-06T08:08:31Z | - |
dc.date.issued | 2001 | en_HK |
dc.identifier.citation | Chinese Physics Letters, 2001, v. 18 n. 6, p. 810-812 | en_HK |
dc.identifier.issn | 0256-307X | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/80626 | - |
dc.description.abstract | Thermal-induced interdiffusion in InAs/GaAs quantum dot superlattices is studied by high-resolution x-ray diffraction rocking curve and photoluminescence techniques. With increasing annealing temperatures, up to 300 meV a blueshift of the emission peak position and down to 16.6 meV a narrowing of the line width are found in the photoluminescence spectra, and respective intensity of the higher-order satellite peaks to lower-order ones in the x-ray rocking curves decreases. Dynamical theory is employed to simulate the measured x-ray diffraction data. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness and stress variations caused by interdiffusion are taken into account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The estimated diffusion coefficient is 1.8 × 10-17 cm2·s-1 at 650°C, 3.2 × 10-17 cm2·s-1 at 750°C, and 1.2 × 10-14 cm2·s-1 at 850°C. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Zhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL | en_HK |
dc.relation.ispartof | Chinese Physics Letters | en_HK |
dc.title | X-ray diffraction analysis on gallium-indium interdiffusion in quantum dot superlattices | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0256-307X&volume=18&spage=810&epage=812&date=2001&atitle=X-Ray+Diffraction+Analysis+on+Gallium-Indium+Interdiffusion+in+Quantum+Dot+Superlattices | en_HK |
dc.identifier.email | Xu, SJ: sjxu@hku.hk | en_HK |
dc.identifier.authority | Xu, SJ=rp00821 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1088/0256-307X/18/6/333 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0035595632 | en_HK |
dc.identifier.hkuros | 65108 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0035595632&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 18 | en_HK |
dc.identifier.issue | 6 | en_HK |
dc.identifier.spage | 810 | en_HK |
dc.identifier.epage | 812 | en_HK |
dc.publisher.place | China | en_HK |
dc.identifier.scopusauthorid | Wang, H=8599896600 | en_HK |
dc.identifier.scopusauthorid | Xu, SJ=7404439005 | en_HK |
dc.identifier.scopusauthorid | Li, Q=7405861869 | en_HK |
dc.identifier.scopusauthorid | Feng, SL=7402531622 | en_HK |
dc.identifier.issnl | 0256-307X | - |