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Article: 418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga-N bond configuration?
Title | 418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga-N bond configuration? |
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Authors | |
Keywords | Crystal growth Gallium nitride Molecular vibrations Nitriding Raman scattering |
Issue Date | 2007 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2007, v. 91 n. 10, article no. 103117 How to Cite? |
Abstract | A Raman-active vibration mode at 418 cm-1 is observed in wurtzite gallium nitride (GaN) nanowires synthesized by different growth methods. In particular, Raman scattering measurements of a number of GaN nanowires systematically prepared by nitriding Β- Ga2 O3 nanowires at different temperatures show an interesting evolution of the mode, revealing that it is most likely the vibration mode of N-rich octahedral Ga- N6 bonds. This idea is further supported by the high-resolution transmission electron microscopic observation. © 2007 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/80609 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Ning, JQ | en_HK |
dc.contributor.author | Xu, SJ | en_HK |
dc.contributor.author | Yu, DP | en_HK |
dc.contributor.author | Shan, YY | en_HK |
dc.contributor.author | Lee, ST | en_HK |
dc.date.accessioned | 2010-09-06T08:08:20Z | - |
dc.date.available | 2010-09-06T08:08:20Z | - |
dc.date.issued | 2007 | en_HK |
dc.identifier.citation | Applied Physics Letters, 2007, v. 91 n. 10, article no. 103117 | - |
dc.identifier.issn | 0003-6951 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/80609 | - |
dc.description.abstract | A Raman-active vibration mode at 418 cm-1 is observed in wurtzite gallium nitride (GaN) nanowires synthesized by different growth methods. In particular, Raman scattering measurements of a number of GaN nanowires systematically prepared by nitriding Β- Ga2 O3 nanowires at different temperatures show an interesting evolution of the mode, revealing that it is most likely the vibration mode of N-rich octahedral Ga- N6 bonds. This idea is further supported by the high-resolution transmission electron microscopic observation. © 2007 American Institute of Physics. | en_HK |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
dc.relation.ispartof | Applied Physics Letters | en_HK |
dc.rights | Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2007, v. 91 n. 10, article no. 103117 and may be found at https://doi.org/10.1063/1.2780081 | - |
dc.subject | Crystal growth | - |
dc.subject | Gallium nitride | - |
dc.subject | Molecular vibrations | - |
dc.subject | Nitriding | - |
dc.subject | Raman scattering | - |
dc.title | 418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga-N bond configuration? | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=91&spage=103117: 1&epage=3&date=2007&atitle=418+cm-1+Raman+scattering+from+gallium+nitride+nanowires:+Is+it+a+vibration+mode+of+N-rich+Ga-N+bond+configuration? | en_HK |
dc.identifier.email | Ning, JQ: ningjq@hkucc.hku.hk | en_HK |
dc.identifier.email | Xu, SJ: sjxu@hku.hk | en_HK |
dc.identifier.authority | Ning, JQ=rp00769 | en_HK |
dc.identifier.authority | Xu, SJ=rp00821 | en_HK |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.2780081 | en_HK |
dc.identifier.scopus | eid_2-s2.0-34548506478 | en_HK |
dc.identifier.hkuros | 135983 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-34548506478&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 91 | en_HK |
dc.identifier.issue | 10 | en_HK |
dc.identifier.spage | article no. 103117 | - |
dc.identifier.epage | article no. 103117 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.isi | WOS:000249322900070 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Ning, JQ=15845992800 | en_HK |
dc.identifier.scopusauthorid | Xu, SJ=7404439005 | en_HK |
dc.identifier.scopusauthorid | Yu, DP=7404667022 | en_HK |
dc.identifier.scopusauthorid | Shan, YY=8988589600 | en_HK |
dc.identifier.scopusauthorid | Lee, ST=7601407495 | en_HK |
dc.identifier.issnl | 0003-6951 | - |