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Article: Structure and transport properties of La2/3Ca1/3MnO3 thin films

TitleStructure and transport properties of La2/3Ca1/3MnO3 thin films
La2/3Ca1/3MnO3薄膜結構與輸運性質
Authors
Wu, XSXu, JCai, HLZhang, AMJiang, SSTan, WSChen, ZJChen, XSun, MHWu, ZHGao, J
KeywordsLa2/3Ca1/3MnO3 thin films
Substrate effects
Interfacial roughness
Lattice mismatch
Issue Date2004
Publisher中国科学院上海应用物理研究所. The Journal's web site is located at http://www.cnki.com.cn/Journal/C-C3-HJSU.htm
Citation
核技術, 2004, v. 27 n. 5, p. 329-333 How to Cite?
Nuclear Techniques, 2004, v. 27 n. 5, p. 329-333 How to Cite?
Abstract用磁控濺射方法在不同單晶襯底材料上制備了一系列含La2/3Ca1/3MnO3(LCMO)薄膜。當薄膜厚度大于200?,在我們實驗條件下可觀測到金屬-絕緣體轉變,且轉變溫度隨厚度和襯底材料而變化。滲流電阻模型被用來解釋薄膜材料的電輸運特性,結合薄膜外延特性(晶格失配)和薄膜與襯底的相互作用,及薄膜表面、界面粗糙度的測量可知薄膜的剩余電阻、極化子的激活能、金屬-絕緣體轉變溫度等密切與薄膜質量相關。 By off-set rf-magnetosputtering technique, we have fabricated La2/3Ca1/3MnO3 ( LCMO) films on SrTiO3 ( STO) , Yttrium stabilized ZrO2 (YSZ ) and sapphire (ALO) substrates. A metal-insulator transition was observed for samples with the thickness is larger than 200Å, the transition temperature, TMI varies with the substrate and the thickness of LCMO. A percolation model was used to fit the temperature dependence of resistance for all films. In combining with the epitaxial process, the interaction between the film and substrates, and the results for surface and interface roughness of the films, we argue that the surplus resistance of the films, the active energy of the polaron, and the metal-insulator transition temperature are strongly related to the quality of the films.
Persistent Identifierhttp://hdl.handle.net/10722/80569
ISSN
0253-3219
2020 SCImago Journal Rankings: 0.305

 

DC FieldValueLanguage
dc.contributor.authorWu, XSen_HK
dc.contributor.authorXu, Jen_HK
dc.contributor.authorCai, HLen_HK
dc.contributor.authorZhang, AMen_HK
dc.contributor.authorJiang, SSen_HK
dc.contributor.authorTan, WSen_HK
dc.contributor.authorChen, ZJen_HK
dc.contributor.authorChen, Xen_HK
dc.contributor.authorSun, MHen_HK
dc.contributor.authorWu, ZHen_HK
dc.contributor.authorGao, Jen_HK
dc.date.accessioned2010-09-06T08:07:53Z-
dc.date.available2010-09-06T08:07:53Z-
dc.date.issued2004en_HK
dc.identifier.citation核技術, 2004, v. 27 n. 5, p. 329-333en_HK
dc.identifier.citationNuclear Techniques, 2004, v. 27 n. 5, p. 329-333-
dc.identifier.issn0253-3219-
dc.identifier.urihttp://hdl.handle.net/10722/80569-
dc.description.abstract用磁控濺射方法在不同單晶襯底材料上制備了一系列含La2/3Ca1/3MnO3(LCMO)薄膜。當薄膜厚度大于200?,在我們實驗條件下可觀測到金屬-絕緣體轉變,且轉變溫度隨厚度和襯底材料而變化。滲流電阻模型被用來解釋薄膜材料的電輸運特性,結合薄膜外延特性(晶格失配)和薄膜與襯底的相互作用,及薄膜表面、界面粗糙度的測量可知薄膜的剩余電阻、極化子的激活能、金屬-絕緣體轉變溫度等密切與薄膜質量相關。 By off-set rf-magnetosputtering technique, we have fabricated La2/3Ca1/3MnO3 ( LCMO) films on SrTiO3 ( STO) , Yttrium stabilized ZrO2 (YSZ ) and sapphire (ALO) substrates. A metal-insulator transition was observed for samples with the thickness is larger than 200Å, the transition temperature, TMI varies with the substrate and the thickness of LCMO. A percolation model was used to fit the temperature dependence of resistance for all films. In combining with the epitaxial process, the interaction between the film and substrates, and the results for surface and interface roughness of the films, we argue that the surplus resistance of the films, the active energy of the polaron, and the metal-insulator transition temperature are strongly related to the quality of the films.-
dc.languagechien_HK
dc.publisher中国科学院上海应用物理研究所. The Journal's web site is located at http://www.cnki.com.cn/Journal/C-C3-HJSU.htm-
dc.relation.ispartof核技術en_HK
dc.relation.ispartofNuclear Techniques-
dc.subjectLa2/3Ca1/3MnO3 thin films-
dc.subjectSubstrate effects-
dc.subjectInterfacial roughness-
dc.subjectLattice mismatch-
dc.titleStructure and transport properties of La2/3Ca1/3MnO3 thin filmsen_HK
dc.titleLa2/3Ca1/3MnO3薄膜結構與輸運性質-
dc.typeArticleen_HK
dc.identifier.emailGao, J: jugao@hku.hken_HK
dc.identifier.authorityGao, J=rp00699en_HK
dc.identifier.hkuros98458en_HK
dc.identifier.volume27-
dc.identifier.issue5-
dc.identifier.spage329-
dc.identifier.epage333-
dc.publisher.placeChina-
dc.identifier.issnl0253-3219-

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