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Article: A study of Al1-xInxN growth by reflection high-energy electron diffraction-incorporation of cation atoms during molecular-beam epitaxy
Title | A study of Al1-xInxN growth by reflection high-energy electron diffraction-incorporation of cation atoms during molecular-beam epitaxy |
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Authors | |
Keywords | Growth (materials) High energy electron diffraction Lattice constants Molecular beam epitaxy Positive ions |
Issue Date | 2008 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2008, v. 92 n. 10, article no. 101902 How to Cite? |
Abstract | Molecular-beam epitaxy of Al1-x Inx N alloys with different indium (In) contents, x, were studied by in situ reflection high-energy electron diffraction (RHEED). Growth rates of the alloys were measured by the RHEED intensity oscillations for different source flux conditions, while the lattice parameters were derived from the diffraction patterns. It was found that under the excess nitrogen growth regime, incorporation of aluminum was complete whereas incorporation of In atoms was incomplete even at temperatures below 400 °C. © 2008 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/80475 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shi, BM | en_HK |
dc.contributor.author | Wang, ZY | en_HK |
dc.contributor.author | Xie, MH | en_HK |
dc.contributor.author | Wu, HS | en_HK |
dc.date.accessioned | 2010-09-06T08:06:52Z | - |
dc.date.available | 2010-09-06T08:06:52Z | - |
dc.date.issued | 2008 | en_HK |
dc.identifier.citation | Applied Physics Letters, 2008, v. 92 n. 10, article no. 101902 | - |
dc.identifier.issn | 0003-6951 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/80475 | - |
dc.description.abstract | Molecular-beam epitaxy of Al1-x Inx N alloys with different indium (In) contents, x, were studied by in situ reflection high-energy electron diffraction (RHEED). Growth rates of the alloys were measured by the RHEED intensity oscillations for different source flux conditions, while the lattice parameters were derived from the diffraction patterns. It was found that under the excess nitrogen growth regime, incorporation of aluminum was complete whereas incorporation of In atoms was incomplete even at temperatures below 400 °C. © 2008 American Institute of Physics. | en_HK |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
dc.relation.ispartof | Applied Physics Letters | en_HK |
dc.rights | Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2008, v. 92 n. 10, article no. 101902 and may be found at https://doi.org/10.1063/1.2894191 | - |
dc.subject | Growth (materials) | - |
dc.subject | High energy electron diffraction | - |
dc.subject | Lattice constants | - |
dc.subject | Molecular beam epitaxy | - |
dc.subject | Positive ions | - |
dc.title | A study of Al1-xInxN growth by reflection high-energy electron diffraction-incorporation of cation atoms during molecular-beam epitaxy | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=92&spage=101902: 1&epage=3&date=2008&atitle=A+study+of+Al1-xInxN+growth+by+reflection+high-energy+electron+diffraction--incorporation+of+cation+atoms+during+molecular-beam+epitaxy | en_HK |
dc.identifier.email | Xie, MH: mhxie@hku.hk | en_HK |
dc.identifier.email | Wu, HS: hswu@hkucc.hku.hk | en_HK |
dc.identifier.authority | Xie, MH=rp00818 | en_HK |
dc.identifier.authority | Wu, HS=rp00813 | en_HK |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.2894191 | en_HK |
dc.identifier.scopus | eid_2-s2.0-40849134307 | en_HK |
dc.identifier.hkuros | 141605 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-40849134307&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 92 | en_HK |
dc.identifier.issue | 10 | en_HK |
dc.identifier.spage | article no. 101902 | - |
dc.identifier.epage | article no. 101902 | - |
dc.identifier.isi | WOS:000253989300033 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Shi, BM=15019647700 | en_HK |
dc.identifier.scopusauthorid | Wang, ZY=8438226800 | en_HK |
dc.identifier.scopusauthorid | Xie, MH=7202255416 | en_HK |
dc.identifier.scopusauthorid | Wu, HS=7405584367 | en_HK |
dc.identifier.issnl | 0003-6951 | - |