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Article: Structure and wear properties of NiTi modified by nitrogen plasma immersion ion implantation
Title | Structure and wear properties of NiTi modified by nitrogen plasma immersion ion implantation |
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Authors | |
Keywords | Nickel titanium shape memory alloy Plasma immersion ion implantation Structure Wear |
Issue Date | 2007 |
Publisher | Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/msea |
Citation | Materials Science And Engineering A, 2007, v. 444 n. 1-2, p. 192-197 How to Cite? |
Abstract | NiTi shape memory alloy samples were plasma-implanted with nitrogen at voltages ranging from -10 to -40 kV. X-ray photoelectron spectroscopy results disclose the formation of gradient TiN layers which thicknesses and elemental in-depth distributions depend on the applied voltages. The effects of the implantation voltages on the wear characteristics were investigated by pin-on-disk tests. In the initial period of our friction test, the implanted samples exhibit low friction coefficients compared to the untreated sample. The wear resistance of the plasma-implanted NiTi samples increases with implantation voltages and decreases with the applied loads. Our results reveal that the wear mechanism of the implanted samples is adhesive-dominant under low applied loads but becomes abrasive-dominant at high applied loads. © 2006 Elsevier B.V. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/79604 |
ISSN | 2023 Impact Factor: 6.1 2023 SCImago Journal Rankings: 1.660 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Liu, X | en_HK |
dc.contributor.author | Wu, S | en_HK |
dc.contributor.author | Chan, YL | en_HK |
dc.contributor.author | Chu, PK | en_HK |
dc.contributor.author | Chung, CY | en_HK |
dc.contributor.author | Chu, CL | en_HK |
dc.contributor.author | Yeung, KWK | en_HK |
dc.contributor.author | Lu, WW | en_HK |
dc.contributor.author | Cheung, KMC | en_HK |
dc.contributor.author | Luk, KDK | en_HK |
dc.date.accessioned | 2010-09-06T07:56:32Z | - |
dc.date.available | 2010-09-06T07:56:32Z | - |
dc.date.issued | 2007 | en_HK |
dc.identifier.citation | Materials Science And Engineering A, 2007, v. 444 n. 1-2, p. 192-197 | en_HK |
dc.identifier.issn | 0921-5093 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/79604 | - |
dc.description.abstract | NiTi shape memory alloy samples were plasma-implanted with nitrogen at voltages ranging from -10 to -40 kV. X-ray photoelectron spectroscopy results disclose the formation of gradient TiN layers which thicknesses and elemental in-depth distributions depend on the applied voltages. The effects of the implantation voltages on the wear characteristics were investigated by pin-on-disk tests. In the initial period of our friction test, the implanted samples exhibit low friction coefficients compared to the untreated sample. The wear resistance of the plasma-implanted NiTi samples increases with implantation voltages and decreases with the applied loads. Our results reveal that the wear mechanism of the implanted samples is adhesive-dominant under low applied loads but becomes abrasive-dominant at high applied loads. © 2006 Elsevier B.V. All rights reserved. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/msea | en_HK |
dc.relation.ispartof | Materials Science and Engineering A | en_HK |
dc.subject | Nickel titanium shape memory alloy | en_HK |
dc.subject | Plasma immersion ion implantation | en_HK |
dc.subject | Structure | en_HK |
dc.subject | Wear | en_HK |
dc.title | Structure and wear properties of NiTi modified by nitrogen plasma immersion ion implantation | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0921-5093&volume=444&issue=1-2&spage=192&epage=7&date=2007&atitle=Structure+and+wear+properties+of+NiTi+modified+by+nitrogen+plasma+immersion+ion+implantation | en_HK |
dc.identifier.email | Yeung, KWK:wkkyeung@hkucc.hku.hk | en_HK |
dc.identifier.email | Lu, WW:wwlu@hku.hk | en_HK |
dc.identifier.email | Cheung, KMC:cheungmc@hku.hk | en_HK |
dc.identifier.email | Luk, KDK:hcm21000@hku.hk | en_HK |
dc.identifier.authority | Yeung, KWK=rp00309 | en_HK |
dc.identifier.authority | Lu, WW=rp00411 | en_HK |
dc.identifier.authority | Cheung, KMC=rp00387 | en_HK |
dc.identifier.authority | Luk, KDK=rp00333 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.msea.2006.08.071 | en_HK |
dc.identifier.scopus | eid_2-s2.0-33845254775 | en_HK |
dc.identifier.hkuros | 137134 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-33845254775&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 444 | en_HK |
dc.identifier.issue | 1-2 | en_HK |
dc.identifier.spage | 192 | en_HK |
dc.identifier.epage | 197 | en_HK |
dc.identifier.isi | WOS:000243624000025 | - |
dc.publisher.place | Switzerland | en_HK |
dc.identifier.scopusauthorid | Liu, X=8408205200 | en_HK |
dc.identifier.scopusauthorid | Wu, S=15125218800 | en_HK |
dc.identifier.scopusauthorid | Chan, YL=8250546500 | en_HK |
dc.identifier.scopusauthorid | Chu, PK=36040705700 | en_HK |
dc.identifier.scopusauthorid | Chung, CY=8100842800 | en_HK |
dc.identifier.scopusauthorid | Chu, CL=7404345713 | en_HK |
dc.identifier.scopusauthorid | Yeung, KWK=13309584700 | en_HK |
dc.identifier.scopusauthorid | Lu, WW=7404215221 | en_HK |
dc.identifier.scopusauthorid | Cheung, KMC=7402406754 | en_HK |
dc.identifier.scopusauthorid | Luk, KDK=7201921573 | en_HK |
dc.identifier.issnl | 0921-5093 | - |