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Article: TEM study of electron beam-induced crystallization of amorphous GeSi films

TitleTEM study of electron beam-induced crystallization of amorphous GeSi films
Authors
Xu, ZWNgan, AHW
Issue Date2004
PublisherTaylor & Francis Ltd. The Journal's web site is located at http://www.tandf.co.uk/journals/titles/09500839.asp
Citation
Philosophical Magazine Letters, 2004, v. 84 n. 11, p. 719-728 How to Cite?
DOI: http://dx.doi.org/10.1080/14786430500038088
AbstractElectron beam-induced crystallization of GeSi amorphous films with two different compositions, Ge0.7Si0.3 and Ge 0.1Si0.9, has been studied. The phase changes were examined by electron diffraction, high-resolution transmission electron microscopy and electron-diffraction simulation by the fast Fourier transformation method. A hexagonal structure induced by the electron irradiation was found in the Ge0.7Si0.3 film. In the Ge 0.1Si0.9 film, diamond cubic (dc) crystals and non-dc phases were formed by irradiation with low-density electron beams and high-density electron beams respectively. © 2004 Taylor & Francis Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/76210
ISSN
0950-0839
2023 Impact Factor: 1.2
2023 SCImago Journal Rankings: 0.344
ISI Accession Number ID
WOS:000228432300007
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, ZWen_HK
dc.contributor.authorNgan, AHWen_HK
dc.date.accessioned2010-09-06T07:18:42Z-
dc.date.available2010-09-06T07:18:42Z-
dc.date.issued2004en_HK
dc.identifier.citationPhilosophical Magazine Letters, 2004, v. 84 n. 11, p. 719-728en_HK
dc.identifier.issn0950-0839en_HK
dc.identifier.urihttp://hdl.handle.net/10722/76210-
dc.description.abstractElectron beam-induced crystallization of GeSi amorphous films with two different compositions, Ge0.7Si0.3 and Ge 0.1Si0.9, has been studied. The phase changes were examined by electron diffraction, high-resolution transmission electron microscopy and electron-diffraction simulation by the fast Fourier transformation method. A hexagonal structure induced by the electron irradiation was found in the Ge0.7Si0.3 film. In the Ge 0.1Si0.9 film, diamond cubic (dc) crystals and non-dc phases were formed by irradiation with low-density electron beams and high-density electron beams respectively. © 2004 Taylor & Francis Ltd.en_HK
dc.languageengen_HK
dc.publisherTaylor & Francis Ltd. The Journal's web site is located at http://www.tandf.co.uk/journals/titles/09500839.aspen_HK
dc.relation.ispartofPhilosophical Magazine Lettersen_HK
dc.titleTEM study of electron beam-induced crystallization of amorphous GeSi filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0950-0839&volume=84&issue=11&spage=719&epage=728&date=2005&atitle=TEM+study+of+electron+beam-induced+crystallization+of+amorphous+GeSi+filmsen_HK
dc.identifier.emailNgan, AHW:hwngan@hkucc.hku.hken_HK
dc.identifier.authorityNgan, AHW=rp00225en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1080/14786430500038088en_HK
dc.identifier.scopuseid_2-s2.0-17044371872en_HK
dc.identifier.hkuros97775en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-17044371872&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume84en_HK
dc.identifier.issue11en_HK
dc.identifier.spage719en_HK
dc.identifier.epage728en_HK
dc.identifier.isiWOS:000228432300007-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridXu, ZW=7405428896en_HK
dc.identifier.scopusauthoridNgan, AHW=7006827202en_HK
dc.identifier.citeulike160410-
dc.identifier.issnl0950-0839-

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