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Article: A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects
Title | A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects |
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Authors | |
Issue Date | 2008 |
Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel |
Citation | Microelectronics Reliability, 2008, v. 48 n. 1, p. 23-28 How to Cite? |
Abstract | A threshold condition different from the classical one is proposed for MOSFET with quantum effects, and is based on self-consistent numerical solution of the Schrödinger's and Poisson's equations. Furthermore, an accurate 1D threshold-voltage model including polysilicon-depletion effects is built by experimental fitting. Simulated results exhibit good agreement with measurement data. Based on this 1D model, a 2D quantum-modified threshold-voltage model for small MOSFET is developed by solving the quasi-2D Poisson's equation and taking short-channel effects and quantum-mechanical effects into consideration. The model can also be used for deep-submicron MOSFET with high-k gate-dielectric and reasonable design of device parameters. © 2007 Elsevier Ltd. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/74111 |
ISSN | 2023 Impact Factor: 1.6 2023 SCImago Journal Rankings: 0.394 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Xu, JP | en_HK |
dc.contributor.author | Li, YP | en_HK |
dc.contributor.author | Lai, PT | en_HK |
dc.contributor.author | Chen, WB | en_HK |
dc.contributor.author | Xu, SG | en_HK |
dc.contributor.author | Guan, JG | en_HK |
dc.date.accessioned | 2010-09-06T06:57:55Z | - |
dc.date.available | 2010-09-06T06:57:55Z | - |
dc.date.issued | 2008 | en_HK |
dc.identifier.citation | Microelectronics Reliability, 2008, v. 48 n. 1, p. 23-28 | en_HK |
dc.identifier.issn | 0026-2714 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/74111 | - |
dc.description.abstract | A threshold condition different from the classical one is proposed for MOSFET with quantum effects, and is based on self-consistent numerical solution of the Schrödinger's and Poisson's equations. Furthermore, an accurate 1D threshold-voltage model including polysilicon-depletion effects is built by experimental fitting. Simulated results exhibit good agreement with measurement data. Based on this 1D model, a 2D quantum-modified threshold-voltage model for small MOSFET is developed by solving the quasi-2D Poisson's equation and taking short-channel effects and quantum-mechanical effects into consideration. The model can also be used for deep-submicron MOSFET with high-k gate-dielectric and reasonable design of device parameters. © 2007 Elsevier Ltd. All rights reserved. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel | en_HK |
dc.relation.ispartof | Microelectronics Reliability | en_HK |
dc.title | A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0026-2714&volume=48&spage=23&epage=28&date=2008&atitle=A+2-D+Threshold-Voltage+Model+for+Small+MOSFET+with+Quantum-Mechanical+Effects | en_HK |
dc.identifier.email | Xu, JP: jpxu@eee.hku.hk | en_HK |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_HK |
dc.identifier.authority | Xu, JP=rp00197 | en_HK |
dc.identifier.authority | Lai, PT=rp00130 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.microrel.2006.12.007 | en_HK |
dc.identifier.scopus | eid_2-s2.0-39149113844 | en_HK |
dc.identifier.hkuros | 150281 | en_HK |
dc.identifier.hkuros | 143456 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-39149113844&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 48 | en_HK |
dc.identifier.issue | 1 | en_HK |
dc.identifier.spage | 23 | en_HK |
dc.identifier.epage | 28 | en_HK |
dc.identifier.isi | WOS:000254372300003 | - |
dc.publisher.place | United Kingdom | en_HK |
dc.identifier.scopusauthorid | Xu, JP=7407004696 | en_HK |
dc.identifier.scopusauthorid | Li, YP=8704252400 | en_HK |
dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_HK |
dc.identifier.scopusauthorid | Chen, WB=15119171500 | en_HK |
dc.identifier.scopusauthorid | Xu, SG=14055300000 | en_HK |
dc.identifier.scopusauthorid | Guan, JG=7201449685 | en_HK |
dc.identifier.issnl | 0026-2714 | - |