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Article: Impurity scattering induced excitonic polariton damping and its influence on the reflectance spectra of GaN epilayers

TitleImpurity scattering induced excitonic polariton damping and its influence on the reflectance spectra of GaN epilayers
Authors
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2009, v. 106 n. 1, article no. 013514 How to Cite?
AbstractThe low-temperature reflectance spectra of a number of GaN epilayers with various impurity/defect concentrations and Hall mobility are systematically investigated in this paper. The interacting excitonic polariton model, considering both excitons A and B, is employed to reproduce the measured reflectance spectra of the GaN films, leading to the determination of the damping coefficients of the propagating polaritons in the films. It is shown that the impurity scattering plays a dominant role in the damping of the excitonic polaritons in the GaN epilayers with higher impurity concentrations at low temperatures, which is additionally supported by the photoluminescence and Hall measurements. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/59650
ISSN
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, YJen_HK
dc.contributor.authorWang, RXen_HK
dc.contributor.authorLi, GQen_HK
dc.contributor.authorXu, SJen_HK
dc.date.accessioned2010-05-31T03:54:30Z-
dc.date.available2010-05-31T03:54:30Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal of Applied Physics, 2009, v. 106 n. 1, article no. 013514-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59650-
dc.description.abstractThe low-temperature reflectance spectra of a number of GaN epilayers with various impurity/defect concentrations and Hall mobility are systematically investigated in this paper. The interacting excitonic polariton model, considering both excitons A and B, is employed to reproduce the measured reflectance spectra of the GaN films, leading to the determination of the damping coefficients of the propagating polaritons in the films. It is shown that the impurity scattering plays a dominant role in the damping of the excitonic polaritons in the GaN epilayers with higher impurity concentrations at low temperatures, which is additionally supported by the photoluminescence and Hall measurements. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.titleImpurity scattering induced excitonic polariton damping and its influence on the reflectance spectra of GaN epilayersen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=106&spage=013514: 1&epage=5&date=2009&atitle=Impurity+scattering+induced+excitonic+polariton+damping+and+its+influence+on+the+reflectance+spectra+of+GaN+epilayersen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.3159898en_HK
dc.identifier.scopuseid_2-s2.0-67650733255en_HK
dc.identifier.hkuros159925en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-67650733255&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume106en_HK
dc.identifier.issue1en_HK
dc.identifier.spagearticle no. 013514-
dc.identifier.epagearticle no. 013514-
dc.identifier.isiWOS:000268065000041-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, YJ=8296286800en_HK
dc.identifier.scopusauthoridWang, RX=7405339075en_HK
dc.identifier.scopusauthoridLi, GQ=35187337800en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.issnl0021-8979-

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