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Article: Study of GaN/SiC contact using slow positron beam

TitleStudy of GaN/SiC contact using slow positron beam
Authors
Wang, HYWeng, HMLing, CC
KeywordsDefect
Positron annihilation
Semiconductor
Issue Date2008
PublisherKexue Chubanshe. The Journal's web site is located at http://g203.iphy.ac.cn/wulixb/
Citation
Wuli Xuebao/Acta Physica Sinica, 2008, v. 57 n. 9, p. 5906-5910 How to Cite?
AbstractUsing a slow positron beam and the program VEPFIT, we found there exists a barrier in the interface between GaN and SiC, which is caused by lots of band-like defects existing in it. The existence of the barrier induced two backing electric fields in diverse directions close to the interface. These fields can produce a longer diffusion length in the SiC region where no field exists compared with that of SiC region, which has an electric field at a set value. The fitted value of the electric field offers a good reference for studying the situation in a real the interface.
Persistent Identifierhttp://hdl.handle.net/10722/59649
ISSN
1000-3290
2021 Impact Factor: 0.906
2020 SCImago Journal Rankings: 0.199

 

DC FieldValueLanguage
dc.contributor.authorWang, HYen_HK
dc.contributor.authorWeng, HMen_HK
dc.contributor.authorLing, CCen_HK
dc.date.accessioned2010-05-31T03:54:28Z-
dc.date.available2010-05-31T03:54:28Z-
dc.date.issued2008en_HK
dc.identifier.citationWuli Xuebao/Acta Physica Sinica, 2008, v. 57 n. 9, p. 5906-5910en_HK
dc.identifier.issn1000-3290en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59649-
dc.description.abstractUsing a slow positron beam and the program VEPFIT, we found there exists a barrier in the interface between GaN and SiC, which is caused by lots of band-like defects existing in it. The existence of the barrier induced two backing electric fields in diverse directions close to the interface. These fields can produce a longer diffusion length in the SiC region where no field exists compared with that of SiC region, which has an electric field at a set value. The fitted value of the electric field offers a good reference for studying the situation in a real the interface.en_HK
dc.languageengen_HK
dc.publisherKexue Chubanshe. The Journal's web site is located at http://g203.iphy.ac.cn/wulixb/en_HK
dc.relation.ispartofWuli Xuebao/Acta Physica Sinicaen_HK
dc.subjectDefecten_HK
dc.subjectPositron annihilationen_HK
dc.subjectSemiconductoren_HK
dc.titleStudy of GaN/SiC contact using slow positron beamen_HK
dc.typeArticleen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-53649100443en_HK
dc.identifier.hkuros155098en_HK
dc.identifier.volume57en_HK
dc.identifier.issue9en_HK
dc.identifier.spage5906en_HK
dc.identifier.epage5910en_HK
dc.publisher.placeChinaen_HK
dc.identifier.scopusauthoridWang, HY=7501740999en_HK
dc.identifier.scopusauthoridWeng, HM=7102468725en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.issnl1000-3290-

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