File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Deep-level defects study of arsenic-implanted ZnO single crystal

TitleDeep-level defects study of arsenic-implanted ZnO single crystal
Authors
Zhu, CYLing, CCBrauer, GAnwand, WSkorupa, W
KeywordsAs-implantation
P-type doping
ZnO
Issue Date2009
PublisherElsevier Ltd. The Journal's web site is located at http://www.elsevier.com/locate/mejo
Citation
Microelectronics Journal, 2009, v. 40 n. 2, p. 286-288 How to Cite?
DOI: http://dx.doi.org/10.1016/j.mejo.2008.07.037
AbstractUnintentionally doped n-type zinc oxide (ZnO) single crystal was implanted by arsenic ions with fluence of 1014 cm-2 at room temperature followed by post-implantation annealing up to 900 °C. Rectifying property was not observed in the As-implanted or the post-implantation annealed samples. Au Schottky contact was fabricated on the samples with the H2O2 pre-treatment. Deep-level transient spectroscopy measurements were performed on the Schottky contacts to study the deep-level defects and their thermal evolution. © 2008 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/59624
ISSN
0026-2692
2023 Impact Factor: 1.9
ISI Accession Number ID
WOS:000263695100025
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhu, CYen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.date.accessioned2010-05-31T03:54:01Z-
dc.date.available2010-05-31T03:54:01Z-
dc.date.issued2009en_HK
dc.identifier.citationMicroelectronics Journal, 2009, v. 40 n. 2, p. 286-288en_HK
dc.identifier.issn0026-2692en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59624-
dc.description.abstractUnintentionally doped n-type zinc oxide (ZnO) single crystal was implanted by arsenic ions with fluence of 1014 cm-2 at room temperature followed by post-implantation annealing up to 900 °C. Rectifying property was not observed in the As-implanted or the post-implantation annealed samples. Au Schottky contact was fabricated on the samples with the H2O2 pre-treatment. Deep-level transient spectroscopy measurements were performed on the Schottky contacts to study the deep-level defects and their thermal evolution. © 2008 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier Ltd. The Journal's web site is located at http://www.elsevier.com/locate/mejoen_HK
dc.relation.ispartofMicroelectronics Journalen_HK
dc.rightsMicroelectronics Journal. Copyright © Elsevier Ltd.en_HK
dc.subjectAs-implantationen_HK
dc.subjectP-type dopingen_HK
dc.subjectZnOen_HK
dc.titleDeep-level defects study of arsenic-implanted ZnO single crystalen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0959-8324&volume=40&spage=286&epage=288&date=2009&atitle=Deep-level+defects+study+of+arsenic-implanted+ZnO+single+crystalen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.mejo.2008.07.037en_HK
dc.identifier.scopuseid_2-s2.0-58749097797en_HK
dc.identifier.hkuros155275en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-58749097797&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume40en_HK
dc.identifier.issue2en_HK
dc.identifier.spage286en_HK
dc.identifier.epage288en_HK
dc.identifier.isiWOS:000263695100025-
dc.identifier.scopusauthoridZhu, CY=14007977600en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.issnl0026-2692-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats