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Article: Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy

TitleClassification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy
Authors
Ding, LLi, BKHe, HTGe, WKWang, JNNing, JQDai, XMLing, CCXu, SJ
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2009, v. 105 n. 5, article no. 053511 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3087762
AbstractA series of bound exciton transitions of a bulk ZnO sample has been studied by high resolution magnetophotoluminescence spectra. Ten sharp intense bound exciton emissions are classified into three groups according to their dependences on magnetic field, angle, and circular polarization of the emission lines. The charge states of the defect centers and exciton types are identified. The effective g factors of the electrons and holes are determined. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/59590
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:000264156300031
Funding AgencyGrant Number
Council of HKSAR603704
HKU 7056/06P
Funding Information:

The authors are grateful to the financial support of Research Grant Council of HKSAR via Grant Nos. 603704 and HKU 7056/06P.

References
References in Scopus
Grants
Multi-photon-excited photoluminescence and dynamic processes of photogenerated carriers in high-quality zinc oxide bulk crystals and nanostructures

 

DC FieldValueLanguage
dc.contributor.authorDing, Len_HK
dc.contributor.authorLi, BKen_HK
dc.contributor.authorHe, HTen_HK
dc.contributor.authorGe, WKen_HK
dc.contributor.authorWang, JNen_HK
dc.contributor.authorNing, JQen_HK
dc.contributor.authorDai, XMen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorXu, SJen_HK
dc.date.accessioned2010-05-31T03:53:23Z-
dc.date.available2010-05-31T03:53:23Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal of Applied Physics, 2009, v. 105 n. 5, article no. 053511-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59590-
dc.description.abstractA series of bound exciton transitions of a bulk ZnO sample has been studied by high resolution magnetophotoluminescence spectra. Ten sharp intense bound exciton emissions are classified into three groups according to their dependences on magnetic field, angle, and circular polarization of the emission lines. The charge states of the defect centers and exciton types are identified. The effective g factors of the electrons and holes are determined. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.titleClassification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=105&spage=053511: 1&epage=4&date=2009&atitle=Classification+of+bound+exciton+complexes+in+bulk+ZnO+by+magnetophotoluminescence+spectroscopyen_HK
dc.identifier.emailNing, JQ: ningjq@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityNing, JQ=rp00769en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.3087762en_HK
dc.identifier.scopuseid_2-s2.0-62549103395en_HK
dc.identifier.hkuros155100en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-62549103395&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume105en_HK
dc.identifier.issue5en_HK
dc.identifier.spagearticle no. 053511-
dc.identifier.epagearticle no. 053511-
dc.identifier.isiWOS:000264156300031-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectMulti-photon-excited photoluminescence and dynamic processes of photogenerated carriers in high-quality zinc oxide bulk crystals and nanostructures-
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dc.identifier.scopusauthoridLi, BK=22941300200en_HK
dc.identifier.scopusauthoridHe, HT=9633178800en_HK
dc.identifier.scopusauthoridGe, WK=7103160307en_HK
dc.identifier.scopusauthoridWang, JN=8248515600en_HK
dc.identifier.scopusauthoridNing, JQ=15845992800en_HK
dc.identifier.scopusauthoridDai, XM=25960763800en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.issnl0021-8979-

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