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Article: Electronic structures and Hall effect in low-doped La0.9Hf0.1MnO3 epitaxial films

TitleElectronic structures and Hall effect in low-doped La0.9Hf0.1MnO3 epitaxial films
Authors
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2009, v. 105 n. 7, article no. 07E514, p. 1-3 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/59565
ISSN
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, Len_HK
dc.contributor.authorGao, Jen_HK
dc.date.accessioned2010-05-31T03:52:53Z-
dc.date.available2010-05-31T03:52:53Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal of Applied Physics, 2009, v. 105 n. 7, article no. 07E514, p. 1-3-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59565-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.titleElectronic structures and Hall effect in low-doped La0.9Hf0.1MnO3 epitaxial filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=105&spage=07E514: 1&epage=3&date=2009&atitle=Electronic+structures+and+Hall+effect+in+low-doped+La0.9Hf0.1MnO3+epitaxial+filmsen_HK
dc.identifier.emailGao, J: jugao@hku.hken_HK
dc.identifier.authorityGao, J=rp00699en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.3076898-
dc.identifier.scopuseid_2-s2.0-65249135636-
dc.identifier.hkuros159929en_HK
dc.identifier.volume105-
dc.identifier.issue7-
dc.identifier.spagearticle no. 07E514, p. 1-
dc.identifier.epagearticle no. 07E514, p. 3-
dc.identifier.isiWOS:000266633500701-
dc.identifier.issnl0021-8979-

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