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Article: Method for measurement of the density of thin films of small organic molecules

TitleMethod for measurement of the density of thin films of small organic molecules
Authors
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://ojps.aip.org/rsio/
Citation
Review of Scientific Instruments, 2007, v. 78 n. 3, article no. 034104 How to Cite?
AbstractAn accurate and sensitive method is reported to measure the thin-film density of vacuum-deposited, small-molecular organic semiconductor materials. A spectrophotometer and surface profiler had been used to determine the mass and thickness of organic thin film, respectively. The calculated density of tris-(8-hydroxyquinolato) aluminum (Alq3) thin film was 1.31±0.01 g/cm3. Vacuum pressures and thin-film growth rates are found to have less impact on the thin-film density of organic material. However, the thin-film density of organic material strongly depends on its chemical structure and molecular weight. Specifically, the chemical structure determines the density of organic material that affects the molecular volume and intermolecular stacking. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57314
ISSN
2021 Impact Factor: 1.843
2020 SCImago Journal Rankings: 0.605
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXiang, HFen_HK
dc.contributor.authorXu, ZXen_HK
dc.contributor.authorRoy, VALen_HK
dc.contributor.authorChe, CMen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-04-12T01:32:52Z-
dc.date.available2010-04-12T01:32:52Z-
dc.date.issued2007en_HK
dc.identifier.citationReview of Scientific Instruments, 2007, v. 78 n. 3, article no. 034104-
dc.identifier.issn0034-6748en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57314-
dc.description.abstractAn accurate and sensitive method is reported to measure the thin-film density of vacuum-deposited, small-molecular organic semiconductor materials. A spectrophotometer and surface profiler had been used to determine the mass and thickness of organic thin film, respectively. The calculated density of tris-(8-hydroxyquinolato) aluminum (Alq3) thin film was 1.31±0.01 g/cm3. Vacuum pressures and thin-film growth rates are found to have less impact on the thin-film density of organic material. However, the thin-film density of organic material strongly depends on its chemical structure and molecular weight. Specifically, the chemical structure determines the density of organic material that affects the molecular volume and intermolecular stacking. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://ojps.aip.org/rsio/en_HK
dc.relation.ispartofReview of Scientific Instrumentsen_HK
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Review of Scientific Instruments, 2007, v. 78 n. 3, article no. 034104 and may be found at https://doi.org/10.1063/1.2712932-
dc.subject.meshOrganic Chemicals - chemistryen_HK
dc.subject.meshSpectrophotometry - instrumentationen_HK
dc.subject.meshMolecular Structureen_HK
dc.subject.meshSemiconductorsen_HK
dc.subject.meshSurface Propertiesen_HK
dc.titleMethod for measurement of the density of thin films of small organic moleculesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0034-6748&volume=78&issue=3&spage=034104&epage=1 &date=2007&atitle=Method+for+measurement+of+the+density+of+thin+films+of+small+organic+molecules+en_HK
dc.identifier.emailXiang, HF:hfxiang@eee.hku.hken_HK
dc.identifier.emailChe, CM:cmche@hku.hken_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityXiang, HF=rp00196en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2712932en_HK
dc.identifier.pmid17411199-
dc.identifier.scopuseid_2-s2.0-34047109700en_HK
dc.identifier.hkuros137086-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34047109700&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume78en_HK
dc.identifier.issue3-
dc.identifier.spagearticle no. 034104-
dc.identifier.epagearticle no. 034104-
dc.identifier.isiWOS:000245320800030-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXiang, HF=23065758900en_HK
dc.identifier.scopusauthoridXu, ZX=8726524500en_HK
dc.identifier.scopusauthoridRoy, VAL=7005870324en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.issnl0034-6748-

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