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Conference Paper: Raman scattering and X-ray diffraction study of neutron irradiated GaN epilayers

TitleRaman scattering and X-ray diffraction study of neutron irradiated GaN epilayers
Authors
Wang, RXXu, SJLi, SFung, SBeling, CDWang, KWei, ZFZhou, TJZhang, JDGong, MPang, GKH
KeywordsDefects
GaN
Neutron irradiation
Issue Date2005
PublisherIEEE.
Citation
Proceedings of 2004 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 04), The University of Queensland, Brisbane, Australia, 8-10 December 2004, p. 141-143 How to Cite?
DOI: http://dx.doi.org/10.1109/COMMAD.2004.1577512
AbstractNeutron irradiation induced defects and their effects on the carrier concentration of GaN epilayers are investigated with Raman scattering and X-ray diffraction techniques. Relative to the as-grown sample, the neutronirradiated samples exhibit a clear variation in the position and lineshape of the A 1(LO)-mode Raman peak as well as in the fullwidth at half-maximum height (FWHM) of the XRD rocking curves. Careful curve fitting and adequate calculations give the carrier concentrations of the irradiated GaN. It is found that the defects induced by neutron irradiation act as carrier trap centres which capture the electron carriers so that the carrier concentration of the irradiated GaN is reduced. © 2005 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/54219
ISSN
1097-2137
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWang, RXen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLi, Sen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorWang, Ken_HK
dc.contributor.authorWei, ZFen_HK
dc.contributor.authorZhou, TJen_HK
dc.contributor.authorZhang, JDen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorPang, GKHen_HK
dc.date.accessioned2009-04-03T07:40:03Z-
dc.date.available2009-04-03T07:40:03Z-
dc.date.issued2005en_HK
dc.identifier.citationProceedings of 2004 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 04), The University of Queensland, Brisbane, Australia, 8-10 December 2004, p. 141-143en_HK
dc.identifier.issn1097-2137en_HK
dc.identifier.urihttp://hdl.handle.net/10722/54219-
dc.description.abstractNeutron irradiation induced defects and their effects on the carrier concentration of GaN epilayers are investigated with Raman scattering and X-ray diffraction techniques. Relative to the as-grown sample, the neutronirradiated samples exhibit a clear variation in the position and lineshape of the A 1(LO)-mode Raman peak as well as in the fullwidth at half-maximum height (FWHM) of the XRD rocking curves. Careful curve fitting and adequate calculations give the carrier concentrations of the irradiated GaN. It is found that the defects induced by neutron irradiation act as carrier trap centres which capture the electron carriers so that the carrier concentration of the irradiated GaN is reduced. © 2005 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMADen_HK
dc.rights©2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectDefectsen_HK
dc.subjectGaNen_HK
dc.subjectNeutron irradiationen_HK
dc.titleRaman scattering and X-ray diffraction study of neutron irradiated GaN epilayersen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1097-2137&volume=&spage=141&epage=143&date=2004&atitle=Raman+scattering+and+X-ray+diffraction+study+of+neutron+irradiated+GaN+epilayersen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/COMMAD.2004.1577512en_HK
dc.identifier.scopuseid_2-s2.0-46149124357en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-46149124357&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage141en_HK
dc.identifier.epage144en_HK
dc.identifier.scopusauthoridWang, RX=7405339075en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridLi, S=35732972500en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridWang, K=7501396674en_HK
dc.identifier.scopusauthoridWei, ZF=7402259042en_HK
dc.identifier.scopusauthoridZhou, TJ=8707410400en_HK
dc.identifier.scopusauthoridZhang, JD=8555988600en_HK
dc.identifier.scopusauthoridGong, M=36932679700en_HK
dc.identifier.scopusauthoridPang, GKH=7103393249en_HK
dc.identifier.issnl1097-2137-

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