File Download
  Links for fulltext
     (May Require Subscription)
  • Find via Find It@HKUL
Supplementary

Conference Paper: Microstructure of the deep level defect E1/E2 in 6H silicon carbide

TitleMicrostructure of the deep level defect E1/E2 in 6H silicon carbide
Authors
Ling, FCCChen, XDGong, M
KeywordsPhysics
Issue Date2004
PublisherAmerican Physical Society. The Journal's web site is located at https://www.aps.org/meetings/baps/index.cfm
Citation
The 2004 March Meeting of the American Physical Society, Montreal, QC., Canada, 22-26 March 2004. In Bulletin of the American Physical Society, 2004, v. 49, p. 904-905, abstract no. P10.005 How to Cite?
AbstractDeep level transient spectroscopy (DLTS) was used to study the deep level defects in low energy electron irradiated 6H-SiC materials. The electron energy was varied as 0.2MeV, 0.3MeV, 0.5MeV and 1.7MeV in order to study the threshold electron energy required to create the various deep levels. No deep level was observed after the 0.2MeV irradiation. Deep levels E1/E2 (EC-0.36/0.44eV) and Ei (EC-0.50eV) were observed after the 0.3MeV irradiation. By considering the minimum energy required to displace the carbon or the silicon atoms in the SiC lattice, it is concluded the creation of the E1/E2 and the Ei defects by the electron irradiation process involves the displacement of the carbon atom in the lattice. Our result suggests the deep levels E1/E2 and Ei should have a microstructure containing a carbon vacancy or a carbon interstitial.
DescriptionSession P10 - Focus Session: Wide-Band-Gap Semiconductors V
Persistent Identifierhttp://hdl.handle.net/10722/47044
ISSN
0003-0503

 

DC FieldValueLanguage
dc.contributor.authorLing, FCCen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorGong, Men_HK
dc.date.accessioned2007-10-30T07:05:10Z-
dc.date.available2007-10-30T07:05:10Z-
dc.date.issued2004en_HK
dc.identifier.citationThe 2004 March Meeting of the American Physical Society, Montreal, QC., Canada, 22-26 March 2004. In Bulletin of the American Physical Society, 2004, v. 49, p. 904-905, abstract no. P10.005en_HK
dc.identifier.issn0003-0503en_HK
dc.identifier.urihttp://hdl.handle.net/10722/47044-
dc.descriptionSession P10 - Focus Session: Wide-Band-Gap Semiconductors V-
dc.description.abstractDeep level transient spectroscopy (DLTS) was used to study the deep level defects in low energy electron irradiated 6H-SiC materials. The electron energy was varied as 0.2MeV, 0.3MeV, 0.5MeV and 1.7MeV in order to study the threshold electron energy required to create the various deep levels. No deep level was observed after the 0.2MeV irradiation. Deep levels E1/E2 (EC-0.36/0.44eV) and Ei (EC-0.50eV) were observed after the 0.3MeV irradiation. By considering the minimum energy required to displace the carbon or the silicon atoms in the SiC lattice, it is concluded the creation of the E1/E2 and the Ei defects by the electron irradiation process involves the displacement of the carbon atom in the lattice. Our result suggests the deep levels E1/E2 and Ei should have a microstructure containing a carbon vacancy or a carbon interstitial.-
dc.format.extent925177 bytes-
dc.format.extent1036577 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at https://www.aps.org/meetings/baps/index.cfmen_HK
dc.relation.ispartofBulletin of the American Physical Society-
dc.rightsCopyright 2004 by The American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleMicrostructure of the deep level defect E1/E2 in 6H silicon carbideen_HK
dc.typeConference_Paperen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.hkuros85838-
dc.identifier.issnl0003-0503-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats