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Conference Paper: Undoped gallium antimonide studied by positron annihilation spectroscopy
Title | Undoped gallium antimonide studied by positron annihilation spectroscopy |
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Authors | |
Keywords | Physics engineering chemistry |
Issue Date | 2003 |
Publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html |
Citation | Progress in compound semiconductor materials III - electronic and optoelectronic applications, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 1-4 December 2003, v. 799, p. 65-70 How to Cite? |
Abstract | Positron lifetime spectroscopy has been used to study the vacancy type defects in undoped gallium antimonide. Temperature dependent positron trapping into the VGarelated defect having a characteristic lifetime of 310ps was observed in the as-grown sample. The lifetime data were well described by a model involving the thermal ionization (0/-) of the VGa-related defect and its ionization energy was found to be E(0/)=83meV. For the electron irradiated sample, the VGa-related defect with lifetime of 310ps that was found in the non-irradiated samples was also identified. Moreover, another lifetime component (280ps) was only observed in the electron irradiated sample but not in the non-irradiated sample. It was also attributed to the V Ga-related defect. The two identified VGa-related defects should have different microstructures because of their difference in characteristic lifetimes. The 280ps component remains thermally stable after the 500°C annealing while the 310ps component anneals at 300°C. |
Persistent Identifier | http://hdl.handle.net/10722/47041 |
ISSN | 2019 SCImago Journal Rankings: 0.114 |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ma, SK | en_HK |
dc.contributor.author | Ling, CC | en_HK |
dc.contributor.author | Weng, HM | en_HK |
dc.contributor.author | Hang, DS | en_HK |
dc.date.accessioned | 2007-10-30T07:05:06Z | - |
dc.date.available | 2007-10-30T07:05:06Z | - |
dc.date.issued | 2003 | en_HK |
dc.identifier.citation | Progress in compound semiconductor materials III - electronic and optoelectronic applications, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 1-4 December 2003, v. 799, p. 65-70 | en_HK |
dc.identifier.issn | 0272-9172 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/47041 | - |
dc.description.abstract | Positron lifetime spectroscopy has been used to study the vacancy type defects in undoped gallium antimonide. Temperature dependent positron trapping into the VGarelated defect having a characteristic lifetime of 310ps was observed in the as-grown sample. The lifetime data were well described by a model involving the thermal ionization (0/-) of the VGa-related defect and its ionization energy was found to be E(0/)=83meV. For the electron irradiated sample, the VGa-related defect with lifetime of 310ps that was found in the non-irradiated samples was also identified. Moreover, another lifetime component (280ps) was only observed in the electron irradiated sample but not in the non-irradiated sample. It was also attributed to the V Ga-related defect. The two identified VGa-related defects should have different microstructures because of their difference in characteristic lifetimes. The 280ps component remains thermally stable after the 500°C annealing while the 310ps component anneals at 300°C. | en_HK |
dc.format.extent | 291578 bytes | - |
dc.format.extent | 1036577 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/pdf | - |
dc.language | eng | en_HK |
dc.publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html | en_HK |
dc.relation.ispartof | Materials Research Society Symposium - Proceedings | en_HK |
dc.rights | Materials Research Society Symposium Proceedings. Copyright © Materials Research Society. | en_HK |
dc.subject | Physics engineering chemistry | en_HK |
dc.title | Undoped gallium antimonide studied by positron annihilation spectroscopy | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=799&spage=65&epage=70&date=2004&atitle=Undoped+gallium+antimonide+studied+by+positron+annihilation+spectroscopy | en_HK |
dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Ling, CC=rp00747 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.scopus | eid_2-s2.0-3042675789 | en_HK |
dc.identifier.hkuros | 85832 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-3042675789&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 799 | en_HK |
dc.identifier.spage | 65 | en_HK |
dc.identifier.epage | 70 | en_HK |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Ma, SK=7403725465 | en_HK |
dc.identifier.scopusauthorid | Ling, CC=13310239300 | en_HK |
dc.identifier.scopusauthorid | Weng, HM=7102468725 | en_HK |
dc.identifier.scopusauthorid | Hang, DS=7004115517 | en_HK |
dc.identifier.issnl | 0272-9172 | - |