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Conference Paper: Identification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepas

TitleIdentification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepas
Authors
Zou, XChan, YCWebb, DPLam, YWLin, SHChan, FYMHu, YFWeng, XBeling, CDFung, SHY
KeywordsPhysics engineering chemistry
Issue Date1999
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
The 1998 Symposium of the Materials Research Society, San Francisco, CA., 14-17 April 1998. In Conference Proceedings, 1999, v. 507, p. 637-642 How to Cite?
AbstractWe show how positron annihilation can distinguish vacancies in undoped hydrogenated amorphous silicon by performing Variable Energy Positron Annihilation Spectroscopy experiments before and after light soaking. We find that vacancy clusters, di-vacancies and a new type of single vacancies are created in undoped as-grown a-Si:H thin film by light illumination. The fact that the vacancy clusters are eliminated by the thermal annealing suggests that the Staebler-Wronski effect is closely related to vacancy clusters in a-Si:H material. The creation of vacancy clusters and redistribution of di-vacancies and even single vacancies probably result in photo-induced structural changes in this material.
DescriptionSymposium Theme: Amorphous and microcrystalline silicon technology
Persistent Identifierhttp://hdl.handle.net/10722/47033
ISSN
0272-9172
2019 SCImago Journal Rankings: 0.114

 

DC FieldValueLanguage
dc.contributor.authorZou, Xen_HK
dc.contributor.authorChan, YCen_HK
dc.contributor.authorWebb, DPen_HK
dc.contributor.authorLam, YWen_HK
dc.contributor.authorLin, SHen_HK
dc.contributor.authorChan, FYMen_HK
dc.contributor.authorHu, YFen_HK
dc.contributor.authorWeng, Xen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, SHYen_HK
dc.date.accessioned2007-10-30T07:04:54Z-
dc.date.available2007-10-30T07:04:54Z-
dc.date.issued1999en_HK
dc.identifier.citationThe 1998 Symposium of the Materials Research Society, San Francisco, CA., 14-17 April 1998. In Conference Proceedings, 1999, v. 507, p. 637-642en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/47033-
dc.descriptionSymposium Theme: Amorphous and microcrystalline silicon technology-
dc.description.abstractWe show how positron annihilation can distinguish vacancies in undoped hydrogenated amorphous silicon by performing Variable Energy Positron Annihilation Spectroscopy experiments before and after light soaking. We find that vacancy clusters, di-vacancies and a new type of single vacancies are created in undoped as-grown a-Si:H thin film by light illumination. The fact that the vacancy clusters are eliminated by the thermal annealing suggests that the Staebler-Wronski effect is closely related to vacancy clusters in a-Si:H material. The creation of vacancy clusters and redistribution of di-vacancies and even single vacancies probably result in photo-induced structural changes in this material.en_HK
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium Proceedings-
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.subjectPhysics engineering chemistryen_HK
dc.titleIdentification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepasen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=507&spage=637&epage=642&date=1999&atitle=Identification+of+vacancy-like+defects+in+high-rate+grown+a-Si+before+and+after+ligh+soaking+by+vepasen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hk-
dc.identifier.emailFung, S: sfung@hku.hk-
dc.identifier.authorityBeling, CD=rp00660-
dc.identifier.authorityFung, S=rp00695-
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.scopuseid_2-s2.0-0032651373-
dc.identifier.hkuros40642-
dc.identifier.volume507-
dc.identifier.spage637-
dc.identifier.epage642-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridZou, X=18234346500-
dc.identifier.scopusauthoridChan, YC=7403676038-
dc.identifier.scopusauthoridWebb, DP=7401528584-
dc.identifier.scopusauthoridLam, YW=7202563950-
dc.identifier.scopusauthoridLin, SH=7407611947-
dc.identifier.scopusauthoridChan, FYM=16156092200-
dc.identifier.scopusauthoridHu, YF=7407119615-
dc.identifier.scopusauthoridWeng, X=35899860500-
dc.identifier.scopusauthoridBeling, CD=7005864180-
dc.identifier.scopusauthoridFung, S=7201970040-
dc.customcontrol.immutablesml 150925-
dc.identifier.issnl0272-9172-

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