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Article: Influence of lateral field on the relaxation oscillation frequency of semiconductor lasers

TitleInfluence of lateral field on the relaxation oscillation frequency of semiconductor lasers
Authors
Yu, SFLi, EH
KeywordsElectronics physics
Optics
Issue Date1996
PublisherIEEE.
Citation
IEEE Journal of Quantum Electronics, 1996, v. 32 n. 1, p. 1-3 How to Cite?
DOI: http://dx.doi.org/10.1109/3.481913
AbstractWe demonstrate theoretically that the lateral field distribution can be utilized to enhance the relaxation oscillation frequency of semiconductor lasers. It is found, for some laser parameters, that gain-guided semiconductor lasers with narrow stripe can exhibit higher relaxation oscillation frequency than index-guided devices.
Persistent Identifierhttp://hdl.handle.net/10722/44728
ISSN
0018-9197
2021 Impact Factor: 2.520
2020 SCImago Journal Rankings: 0.661
ISI Accession Number ID
WOS:A1996TP75200001

 

DC FieldValueLanguage
dc.contributor.authorYu, SFen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:08:54Z-
dc.date.available2007-10-30T06:08:54Z-
dc.date.issued1996en_HK
dc.identifier.citationIEEE Journal of Quantum Electronics, 1996, v. 32 n. 1, p. 1-3en_HK
dc.identifier.issn0018-9197en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44728-
dc.description.abstractWe demonstrate theoretically that the lateral field distribution can be utilized to enhance the relaxation oscillation frequency of semiconductor lasers. It is found, for some laser parameters, that gain-guided semiconductor lasers with narrow stripe can exhibit higher relaxation oscillation frequency than index-guided devices.en_HK
dc.format.extent387829 bytes-
dc.format.extent14323 bytes-
dc.format.extent4647 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Journal of Quantum Electronics-
dc.rights©1996 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectElectronics physicsen_HK
dc.subjectOpticsen_HK
dc.titleInfluence of lateral field on the relaxation oscillation frequency of semiconductor lasersen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9197&volume=32&issue=1&spage=1&epage=3&date=1996&atitle=Influence+of+lateral+field+on+the+relaxation+oscillation+frequency+of+semiconductor+lasersen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/3.481913en_HK
dc.identifier.scopuseid_2-s2.0-0029771245-
dc.identifier.hkuros11615-
dc.identifier.isiWOS:A1996TP75200001-
dc.identifier.issnl0018-9197-

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