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Article: Temperature dependence of the LO phonon sidebands in free exciton emission of GaN
Title | Temperature dependence of the LO phonon sidebands in free exciton emission of GaN |
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Authors | |
Keywords | Physics Engineering |
Issue Date | 2006 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 2006, v. 99 n. 7, article no. 073508 How to Cite? |
Abstract | Temperature-dependent radiative recombination of free excitons involving one or two LO phonons in GaN is investigated in detail. It is found that both phonon sidebands possess asymmetric lineshapes and their energy spacings from the zero-phonon line strongly deviate from the characteristic energy of LO phonons as the temperature increases. Furthermore, the deviation rates of one- and two-phonon sidebands are significantly different. Segall-Mahan [Phys. Rev. 171, 935 (1968)] theory, taking the exciton-photon and exciton-phonon interactions into account, is employed to calculate the sidebands of one or two LO phonons for free excitons in a wide temperature range. Excellent agreement between the theory and experiment is achieved by using only one adjustable parameter, which leads to determination of the effective mass of heavy holes (∼0.5 m0). © 2006 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/44602 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Xu, SJ | en_HK |
dc.contributor.author | Li, GQ | en_HK |
dc.contributor.author | Xiong, SJ | en_HK |
dc.contributor.author | Che, CM | en_HK |
dc.date.accessioned | 2007-10-30T06:05:29Z | - |
dc.date.available | 2007-10-30T06:05:29Z | - |
dc.date.issued | 2006 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 2006, v. 99 n. 7, article no. 073508 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/44602 | - |
dc.description.abstract | Temperature-dependent radiative recombination of free excitons involving one or two LO phonons in GaN is investigated in detail. It is found that both phonon sidebands possess asymmetric lineshapes and their energy spacings from the zero-phonon line strongly deviate from the characteristic energy of LO phonons as the temperature increases. Furthermore, the deviation rates of one- and two-phonon sidebands are significantly different. Segall-Mahan [Phys. Rev. 171, 935 (1968)] theory, taking the exciton-photon and exciton-phonon interactions into account, is employed to calculate the sidebands of one or two LO phonons for free excitons in a wide temperature range. Excellent agreement between the theory and experiment is achieved by using only one adjustable parameter, which leads to determination of the effective mass of heavy holes (∼0.5 m0). © 2006 American Institute of Physics. | en_HK |
dc.format.extent | 272790 bytes | - |
dc.format.extent | 4079 bytes | - |
dc.format.extent | 6153 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.rights | Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2006, v. 99 n. 7, article no. 073508 and may be found at https://doi.org/10.1063/1.2188034 | - |
dc.subject | Physics Engineering | en_HK |
dc.title | Temperature dependence of the LO phonon sidebands in free exciton emission of GaN | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=99&issue=7&spage=073508:1&epage=5&date=2006&atitle=Temperature+dependence+of+the+LO+phonon+sidebands+in+free+exciton+emission+of+GaN | en_HK |
dc.identifier.email | Xu, SJ: sjxu@hku.hk | en_HK |
dc.identifier.email | Che, CM: cmche@hku.hk | en_HK |
dc.identifier.authority | Xu, SJ=rp00821 | en_HK |
dc.identifier.authority | Che, CM=rp00670 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.2188034 | en_HK |
dc.identifier.scopus | eid_2-s2.0-33645933910 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-33645933910&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 99 | en_HK |
dc.identifier.issue | 7 | en_HK |
dc.identifier.spage | article no. 073508 | - |
dc.identifier.epage | article no. 073508 | - |
dc.identifier.isi | WOS:000236770900015 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Xu, SJ=7404439005 | en_HK |
dc.identifier.scopusauthorid | Li, GQ=35187337800 | en_HK |
dc.identifier.scopusauthorid | Xiong, SJ=7202791585 | en_HK |
dc.identifier.scopusauthorid | Che, CM=7102442791 | en_HK |
dc.identifier.issnl | 0021-8979 | - |