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Article: Two-photon photoluminescence and excitation spectra of InGaN/GaN quantum wells

TitleTwo-photon photoluminescence and excitation spectra of InGaN/GaN quantum wells
Authors
Li, QXu, SJLi, GQDai, DCChe, CM
KeywordsPhysics Engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 89 n. 1, article no. 011104 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2218772
AbstractWe report an observation of efficient two-photon photoluminescence (TPL) of InGaN/GaN multi-quantum-well (MQW) structures using broadband femtosecond near-infrared excitation laser. Near quadratic excitation-intensity dependence and asymmetric collinear interferometric autocorrelation trace of the TPL signal unambiguously verify the nonlinearity of the TPL process. We also measured the excitation spectrum of the TPL signal and found that it can be fitted well with the theoretical two-photon absorption coefficient formula for direct wide gap semiconductors. The decay time of the TPL signal was determined using a time-resolved photoluminescence technique. These results demonstrate the strong nonlinear optical property of InGaN/GaN MQWs. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/44596
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000238849200004
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, Qen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLi, GQen_HK
dc.contributor.authorDai, DCen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2007-10-30T06:05:21Z-
dc.date.available2007-10-30T06:05:21Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 89 n. 1, article no. 011104-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44596-
dc.description.abstractWe report an observation of efficient two-photon photoluminescence (TPL) of InGaN/GaN multi-quantum-well (MQW) structures using broadband femtosecond near-infrared excitation laser. Near quadratic excitation-intensity dependence and asymmetric collinear interferometric autocorrelation trace of the TPL signal unambiguously verify the nonlinearity of the TPL process. We also measured the excitation spectrum of the TPL signal and found that it can be fitted well with the theoretical two-photon absorption coefficient formula for direct wide gap semiconductors. The decay time of the TPL signal was determined using a time-resolved photoluminescence technique. These results demonstrate the strong nonlinear optical property of InGaN/GaN MQWs. © 2006 American Institute of Physics.en_HK
dc.format.extent246206 bytes-
dc.format.extent4079 bytes-
dc.format.extent6153 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2006, v. 89 n. 1, article no. 011104 and may be found at https://doi.org/10.1063/1.2218772-
dc.subjectPhysics Engineeringen_HK
dc.titleTwo-photon photoluminescence and excitation spectra of InGaN/GaN quantum wellsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=89&issue=1&spage=011104:1&epage=3&date=2006&atitle=Two-photon+photoluminescence+and+excitation+spectra+of+InGaN/GaN+quantum+wellsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailChe, CM: cmche@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2218772en_HK
dc.identifier.scopuseid_2-s2.0-33745797253en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33745797253&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume89en_HK
dc.identifier.issue1en_HK
dc.identifier.spagearticle no. 011104-
dc.identifier.epagearticle no. 011104-
dc.identifier.isiWOS:000238849200004-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, Q=36065022600en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridLi, GQ=35187337800en_HK
dc.identifier.scopusauthoridDai, DC=7102762189en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK
dc.identifier.issnl0003-6951-

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