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Article: Efficient photovoltaic cells with wide photosensitization range fabricated from rhenium benzathiazole complexes

TitleEfficient photovoltaic cells with wide photosensitization range fabricated from rhenium benzathiazole complexes
Authors
KeywordsPhysics Engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 90 n. 8, article no. 081107 How to Cite?
AbstractBulk heterojunction ITO/CuPc/sensitizer: C60 C60 Al (ITO denotes indium tin oxide; CuPc denotes copper phthalocyanine) photovoltaic cells were fabricated by using rhenium(I) complexes with benzathiazole ligands as the sensitizers. The complexes enhance the photosensitivity in the region of 450-550 nm in which CuPc and C60 have little absorption. The devices exhibited high fill factors in excess of 0.6, and the power conversion efficiency of the best device 1.72%. A device based on pure CuPc: C60 mixed layer was fabricated for comparison. The external quantum efficiency of the devices remained higher than 10% in the entire visible region, which clearly demonstrated the importance of rhenium complexes as sensitizers. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/44594
ISSN
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWong, HLen_HK
dc.contributor.authorMak, CSKen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.date.accessioned2007-10-30T06:05:19Z-
dc.date.available2007-10-30T06:05:19Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 90 n. 8, article no. 081107-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44594-
dc.description.abstractBulk heterojunction ITO/CuPc/sensitizer: C60 C60 Al (ITO denotes indium tin oxide; CuPc denotes copper phthalocyanine) photovoltaic cells were fabricated by using rhenium(I) complexes with benzathiazole ligands as the sensitizers. The complexes enhance the photosensitivity in the region of 450-550 nm in which CuPc and C60 have little absorption. The devices exhibited high fill factors in excess of 0.6, and the power conversion efficiency of the best device 1.72%. A device based on pure CuPc: C60 mixed layer was fabricated for comparison. The external quantum efficiency of the devices remained higher than 10% in the entire visible region, which clearly demonstrated the importance of rhenium complexes as sensitizers. © 2007 American Institute of Physics.en_HK
dc.format.extent271293 bytes-
dc.format.extent3553 bytes-
dc.format.extent4681 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2007, v. 90 n. 8, article no. 081107 and may be found at https://doi.org/10.1063/1.2696843-
dc.subjectPhysics Engineeringen_HK
dc.titleEfficient photovoltaic cells with wide photosensitization range fabricated from rhenium benzathiazole complexesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=90&issue=8&spage=081107:1&epage=3&date=2007&atitle=Efficient+photovoltaic+cells+with+wide+photosensitization+range+fabricated+from+rhenium+benzathiazole+complexesen_HK
dc.identifier.emailMak, CSK: cskm@hkucc.hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityMak, CSK=rp00761en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2696843en_HK
dc.identifier.scopuseid_2-s2.0-33847176558en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33847176558&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume90en_HK
dc.identifier.issue8en_HK
dc.identifier.spagearticle no. 081107-
dc.identifier.epagearticle no. 081107-
dc.identifier.isiWOS:000244420600007-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWong, HL=36920239500en_HK
dc.identifier.scopusauthoridMak, CSK=8899597100en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.issnl0003-6951-

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