Showing results 1 to 3 of 3
Title | Author(s) | Issue Date | |
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Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors Proceeding/Conference:Technical Digest - International Electron Devices Meeting | 2002 | ||
Multilayer graphene nanoribbon for 3D stacking of the transistor channel Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2009 | ||
Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2004 |