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Article: Electronic states of epitaxial thin films of La0.9Sn0.1MnO3 and La0.9Ca0.1MnO3

TitleElectronic states of epitaxial thin films of La0.9Sn0.1MnO3 and La0.9Ca0.1MnO3
Authors
Gao, JDai, SYLi, TK
KeywordsPhysics
Issue Date2003
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter), 2003, v. 67 n. 15, article no. 153403 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevB.67.153403
AbstractStructure, transport properties, and electronic structure of epitaxial thin films La0.9Sn0.1MnO3 and La0.9Ca0.1MnO3 have been experimentally studied. According to the Hall-effect measurement, La0.9Sn0.1MnO3 is an n-type conductor in the metallic state due to the substitution of Sn for La. X-ray photoelectron spectroscopy spectra revealed a shift of the Fermi level and the Mn ionic core level of La0.9Sn0.1MnO3 in comparison with La0.9Ca0.1MnO3. The difference between the Mn-2p spectra of La0.9Sn0.1MnO3 and La0.9Ca0.1MnO3 implies that Mn ions in the former are at a Mn2+/Mn3+ mixed-valence state, which is significantly different from the divalent-element-doped manganese oxides, where the Mn ions are in the mixed-valence state of Mn3+/Mn4+.
Persistent Identifierhttp://hdl.handle.net/10722/43383
ISSN
0163-1829
ISI Accession Number ID
WOS:000182741400022

 

DC FieldValueLanguage
dc.contributor.authorGao, Jen_HK
dc.contributor.authorDai, SYen_HK
dc.contributor.authorLi, TKen_HK
dc.date.accessioned2007-03-23T04:44:40Z-
dc.date.available2007-03-23T04:44:40Z-
dc.date.issued2003en_HK
dc.identifier.citationPhysical Review B (Condensed Matter), 2003, v. 67 n. 15, article no. 153403-
dc.identifier.issn0163-1829-
dc.identifier.urihttp://hdl.handle.net/10722/43383-
dc.description.abstractStructure, transport properties, and electronic structure of epitaxial thin films La0.9Sn0.1MnO3 and La0.9Ca0.1MnO3 have been experimentally studied. According to the Hall-effect measurement, La0.9Sn0.1MnO3 is an n-type conductor in the metallic state due to the substitution of Sn for La. X-ray photoelectron spectroscopy spectra revealed a shift of the Fermi level and the Mn ionic core level of La0.9Sn0.1MnO3 in comparison with La0.9Ca0.1MnO3. The difference between the Mn-2p spectra of La0.9Sn0.1MnO3 and La0.9Ca0.1MnO3 implies that Mn ions in the former are at a Mn2+/Mn3+ mixed-valence state, which is significantly different from the divalent-element-doped manganese oxides, where the Mn ions are in the mixed-valence state of Mn3+/Mn4+.en_HK
dc.format.extent64893 bytes-
dc.format.extent30720 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter)-
dc.rightsCopyright 2003 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.67.153403-
dc.subjectPhysicsen_HK
dc.titleElectronic states of epitaxial thin films of La0.9Sn0.1MnO3 and La0.9Ca0.1MnO3en_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=67&issue=15&spage=153403:1&epage=4&date=2003&atitle=Electronic+states+of+epitaxial+thin+films+of+La0.9Sn0.1MnO3+and+La0.9Ca0.1MnO3en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.67.153403en_HK
dc.identifier.scopuseid_2-s2.0-0038170392-
dc.identifier.hkuros77177-
dc.identifier.volume67-
dc.identifier.issue15-
dc.identifier.spagearticle no. 153403-
dc.identifier.epagearticle no. 153403-
dc.identifier.isiWOS:000182741400022-
dc.identifier.issnl0163-1829-

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