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Article: Thermoelectric power of hot carriers in the nonequilibrium-statistical- operator approach
Title | Thermoelectric power of hot carriers in the nonequilibrium-statistical- operator approach |
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Authors | |
Keywords | Physics |
Issue Date | 1995 |
Publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ |
Citation | Physical Review B (Condensed Matter), 1995, v. 51 n. 4, p. 2193-2198 How to Cite? |
Abstract | The thermoelectric power of charge carriers heated under a strong applied electric field in semiconductors is obtained by use of the nonequilibrium- statistical-operator (NSO) method. The balance equations are derived in terms of the NSO density matrix and the force-force correlation functions which can easily be calculated for a system with electron-impurity and electron-phonon interactions. A numerical study has been performed for hole-doped Ge. It is shown that the hot-electron thermoelectric power is sensitively affected by the applied electric field and that its sign is reversed at higher electric fields. © 1995 The American Physical Society. |
Persistent Identifier | http://hdl.handle.net/10722/43223 |
ISSN | |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Xing, DY | en_HK |
dc.contributor.author | Liu, M | en_HK |
dc.contributor.author | Dong, JM | en_HK |
dc.contributor.author | Wang, ZD | en_HK |
dc.date.accessioned | 2007-03-23T04:41:38Z | - |
dc.date.available | 2007-03-23T04:41:38Z | - |
dc.date.issued | 1995 | en_HK |
dc.identifier.citation | Physical Review B (Condensed Matter), 1995, v. 51 n. 4, p. 2193-2198 | - |
dc.identifier.issn | 0163-1829 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/43223 | - |
dc.description.abstract | The thermoelectric power of charge carriers heated under a strong applied electric field in semiconductors is obtained by use of the nonequilibrium- statistical-operator (NSO) method. The balance equations are derived in terms of the NSO density matrix and the force-force correlation functions which can easily be calculated for a system with electron-impurity and electron-phonon interactions. A numerical study has been performed for hole-doped Ge. It is shown that the hot-electron thermoelectric power is sensitively affected by the applied electric field and that its sign is reversed at higher electric fields. © 1995 The American Physical Society. | en_HK |
dc.format.extent | 846453 bytes | - |
dc.format.extent | 45056 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/msword | - |
dc.language | eng | en_HK |
dc.publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ | en_HK |
dc.relation.ispartof | Physical Review B (Condensed Matter) | - |
dc.rights | Copyright 1995 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.51.2193 | - |
dc.subject | Physics | en_HK |
dc.title | Thermoelectric power of hot carriers in the nonequilibrium-statistical- operator approach | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0163-1829&volume=51&issue=4&spage=2193&epage=2198&date=1995&atitle=Thermoelectric+power+of+hot+carriers+in+the+nonequilibrium-+statistical-operator+approach | en_HK |
dc.identifier.email | Wang, ZD: zwang@hkucc.hku.hk | en_HK |
dc.identifier.authority | Wang, ZD=rp00802 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1103/PhysRevB.51.2193 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0009280582 | en_HK |
dc.identifier.hkuros | 3231 | - |
dc.identifier.volume | 51 | en_HK |
dc.identifier.issue | 4 | en_HK |
dc.identifier.spage | 2193 | en_HK |
dc.identifier.epage | 2198 | en_HK |
dc.identifier.isi | WOS:A1995QF33900022 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Xing, DY=22965286500 | en_HK |
dc.identifier.scopusauthorid | Liu, M=7406300052 | en_HK |
dc.identifier.scopusauthorid | Dong, JM=7403365671 | en_HK |
dc.identifier.scopusauthorid | Wang, ZD=14828459100 | en_HK |
dc.identifier.issnl | 0163-1829 | - |