Metal-to-insulator transition in sputter deposited 3Ni/Al thin films

Abstract

Thin films with a 3Ni/1Al atomic ratio were synthesized using low-power dc planar magnetron sputtering from a nickel–aluminum alloy target. Chemical analysis revealed that a significant amount of oxygen was incorporated into the Ni–Al thin films which were prepared under a typical vacuum of ~1×10–5 mbar. These thin films were found to exhibit a prominent temperature dependence of electrical resistance, the magnitude of which diminishes upon increasing the film thickness or the in situ deposition temperature. Cross-sectional transmission electron microscopy revealed a nanocrystalline structure of the films which changes as a function of deposition temperature. Electron diffraction indicates the existence of a single-phase face-centered cubic structure in the nanocrystallites, yet with an enormous expansion of the crystal lattice for the low temperature deposited films when compared with the intermetallic Ni3Al lattice. On raising the deposition temperature or increasing the film thickness, however, the lattice constant gradually declines toward the lattice constant of bulk Ni3Al. An attempt is made to correlate the lattice structures of the crystallites and the electrical properties of the films with the potential influence of the dissolved oxygen in the Ni–Al lattice. © 2000 American Institute of Physics.