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Article: Beam divergence measurements of InGaN/GaN micro-array light-emitting diodes using confocal microscopy

TitleBeam divergence measurements of InGaN/GaN micro-array light-emitting diodes using confocal microscopy
Authors
KeywordsPhysics engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 86 n. 4, article no. 041111, p. 1-3 How to Cite?
AbstractThe recent development of high-density, two-dimensional arrays of micrometer-sized InGaN/GaN light-emitting diodes (micro-LEDs) with potential applications from scientific instrumentation to microdisplays has created an urgent need for controlled manipulation of the light output from these devices. With directed light output these devices can be used in situations where collimated beams or light focused onto several thousand matrix points is desired. In order to do this effectively, the emission characteristics of the devices must be fully understood and characterized. Here we utilize confocal microscopy to directly determine the emission characteristics and angular beam divergences from the individual micro-LED elements. The technique is applied to both top (into air) and bottom (through substrate) emission in arrays of green (540 nm), blue (470 nm), and UV (370 nm) micro-LED devices, at distances of up to 50 μm from the emission plane. The results are consistent with simple optical modeling of the expected beam profiles. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42698
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorGriffin, Cen_HK
dc.contributor.authorGu, Een_HK
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorJeon, CWen_HK
dc.contributor.authorGirkin, JMen_HK
dc.contributor.authorDawson, MDen_HK
dc.contributor.authorMcConnell, Gen_HK
dc.date.accessioned2007-03-23T04:30:21Z-
dc.date.available2007-03-23T04:30:21Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 86 n. 4, article no. 041111, p. 1-3-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42698-
dc.description.abstractThe recent development of high-density, two-dimensional arrays of micrometer-sized InGaN/GaN light-emitting diodes (micro-LEDs) with potential applications from scientific instrumentation to microdisplays has created an urgent need for controlled manipulation of the light output from these devices. With directed light output these devices can be used in situations where collimated beams or light focused onto several thousand matrix points is desired. In order to do this effectively, the emission characteristics of the devices must be fully understood and characterized. Here we utilize confocal microscopy to directly determine the emission characteristics and angular beam divergences from the individual micro-LED elements. The technique is applied to both top (into air) and bottom (through substrate) emission in arrays of green (540 nm), blue (470 nm), and UV (370 nm) micro-LED devices, at distances of up to 50 μm from the emission plane. The results are consistent with simple optical modeling of the expected beam profiles. © 2005 American Institute of Physics.en_HK
dc.format.extent271252 bytes-
dc.format.extent27136 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2005, v. 86 n. 4, article no. 041111, p. 1-3 and may be found at https://doi.org/10.1063/1.1850599-
dc.subjectPhysics engineeringen_HK
dc.titleBeam divergence measurements of InGaN/GaN micro-array light-emitting diodes using confocal microscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=86&issue=4&spage=041111:1&epage=3&date=2005&atitle=Beam+divergence+measurements+of+InGaN/GaN+micro-array+light-emitting+diodes+using+confocal+microscopyen_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1850599en_HK
dc.identifier.scopuseid_2-s2.0-13644276627en_HK
dc.identifier.hkuros102786-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-13644276627&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue4en_HK
dc.identifier.spagearticle no. 041111, p. 1-
dc.identifier.epagearticle no. 041111, p. 3-
dc.identifier.isiWOS:000226761400011-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridGriffin, C=8732304400en_HK
dc.identifier.scopusauthoridGu, E=7004420026en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridJeon, CW=7006894315en_HK
dc.identifier.scopusauthoridGirkin, JM=6701651108en_HK
dc.identifier.scopusauthoridDawson, MD=7203061779en_HK
dc.identifier.scopusauthoridMcConnell, G=7004466744en_HK
dc.identifier.issnl0003-6951-

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