File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: InGaN nano-ring structures for high-efficiency light emitting diodes

TitleInGaN nano-ring structures for high-efficiency light emitting diodes
Authors
KeywordsPhysics engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 86 n. 2, article no. 021101, p. 1-3 How to Cite?
AbstractA technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42697
ISSN
2019 Impact Factor: 3.597
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorJeon, CWen_HK
dc.contributor.authorLiu, Cen_HK
dc.contributor.authorWatson, IMen_HK
dc.contributor.authorDawson, MDen_HK
dc.contributor.authorEdwards, PRen_HK
dc.contributor.authorMartin, RWen_HK
dc.contributor.authorTripathy, Sen_HK
dc.contributor.authorChua, SJen_HK
dc.date.accessioned2007-03-23T04:30:20Z-
dc.date.available2007-03-23T04:30:20Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 86 n. 2, article no. 021101, p. 1-3-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42697-
dc.description.abstractA technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated. © 2005 American Institute of Physics.en_HK
dc.format.extent492598 bytes-
dc.format.extent27136 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2005, v. 86 n. 2, article no. 021101, p. 1-3 and may be found at https://doi.org/10.1063/1.1849439-
dc.subjectPhysics engineeringen_HK
dc.titleInGaN nano-ring structures for high-efficiency light emitting diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=86&issue=2&spage=021101:1&epage=3&date=2005&atitle=InGaN+nano-ring+structures+for+high-efficiency+light+emitting+diodesen_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1849439en_HK
dc.identifier.scopuseid_2-s2.0-19744383963en_HK
dc.identifier.hkuros102785-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-19744383963&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue2en_HK
dc.identifier.spagearticle no. 021101, p. 1-
dc.identifier.epagearticle no. 021101, p. 3-
dc.identifier.isiWOS:000226701500001-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridJeon, CW=7006894315en_HK
dc.identifier.scopusauthoridLiu, C=36064477300en_HK
dc.identifier.scopusauthoridWatson, IM=24482692400en_HK
dc.identifier.scopusauthoridDawson, MD=7203061779en_HK
dc.identifier.scopusauthoridEdwards, PR=7401881875en_HK
dc.identifier.scopusauthoridMartin, RW=9742683000en_HK
dc.identifier.scopusauthoridTripathy, S=8698106400en_HK
dc.identifier.scopusauthoridChua, SJ=35516064500en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats