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Article: Gallium/aluminum interdiffusion between n-GaN and sapphire
Title | Gallium/aluminum interdiffusion between n-GaN and sapphire |
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Authors | |
Keywords | Physics engineering |
Issue Date | 1998 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 1998, v. 84 n. 4, p. 2355-2357 How to Cite? |
Abstract | The distribution profiles of Ga and Al near the interface of the n-GaN/sapphire system were measured by x-ray energy dispersive spectroscopy (XEDS). The results are obtained by the corrected XED spectra. First, the gallium diffusing into the sapphire substrate obeys the law of remainder probability function. The gallium diffusion coefficient DGa=2.30×10-13 cm2s-1 was calculated by theoretical fitting. Second, the diffusion is associated with the GaN growth process at high temperature. Compared to the diffusion of Ga into the sapphire substrate, much less Al antidiffusion from the substrate to the GaN film, with diffusion coefficient DA1 approximately equal to 4.8×10-15 cm2s-1, was observed in the film. © 1998 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/42442 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Xiaoliang, X | en_HK |
dc.contributor.author | Youwen, Z | en_HK |
dc.contributor.author | Wenhong, S | en_HK |
dc.contributor.author | Xudong, C | en_HK |
dc.contributor.author | Niefung, S | en_HK |
dc.contributor.author | Tongnian, S | en_HK |
dc.contributor.author | Chunxiang, J | en_HK |
dc.date.accessioned | 2007-01-29T08:50:08Z | - |
dc.date.available | 2007-01-29T08:50:08Z | - |
dc.date.issued | 1998 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 1998, v. 84 n. 4, p. 2355-2357 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/42442 | - |
dc.description.abstract | The distribution profiles of Ga and Al near the interface of the n-GaN/sapphire system were measured by x-ray energy dispersive spectroscopy (XEDS). The results are obtained by the corrected XED spectra. First, the gallium diffusing into the sapphire substrate obeys the law of remainder probability function. The gallium diffusion coefficient DGa=2.30×10-13 cm2s-1 was calculated by theoretical fitting. Second, the diffusion is associated with the GaN growth process at high temperature. Compared to the diffusion of Ga into the sapphire substrate, much less Al antidiffusion from the substrate to the GaN film, with diffusion coefficient DA1 approximately equal to 4.8×10-15 cm2s-1, was observed in the film. © 1998 American Institute of Physics. | en_HK |
dc.format.extent | 73703 bytes | - |
dc.format.extent | 37376 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/msword | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.rights | Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1998, v. 84 n. 4, p. 2355-2357 and may be found at https://doi.org/10.1063/1.368362 | - |
dc.subject | Physics engineering | en_HK |
dc.title | Gallium/aluminum interdiffusion between n-GaN and sapphire | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=84&issue=4&spage=2355&epage=2357&date=1998&atitle=Gallium/aluminum+interdiffusion+between+n-GaN+and+sapphire | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.368362 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0001301437 | en_HK |
dc.identifier.hkuros | 38915 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0001301437&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 84 | en_HK |
dc.identifier.issue | 4 | en_HK |
dc.identifier.spage | 2355 | en_HK |
dc.identifier.epage | 2357 | en_HK |
dc.identifier.isi | WOS:000075257700095 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Xiaoliang, X=6507009961 | en_HK |
dc.identifier.scopusauthorid | Youwen, Z=6507816545 | en_HK |
dc.identifier.scopusauthorid | Wenhong, S=6505697599 | en_HK |
dc.identifier.scopusauthorid | Xudong, C=36883045400 | en_HK |
dc.identifier.scopusauthorid | Niefung, S=6504081827 | en_HK |
dc.identifier.scopusauthorid | Tongnian, S=6506708988 | en_HK |
dc.identifier.scopusauthorid | Chunxiang, J=6504026807 | en_HK |
dc.identifier.issnl | 0021-8979 | - |