File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Resonant tunneling of holes in double-barrier structures in the presence of an in-plane magnetic field

TitleResonant tunneling of holes in double-barrier structures in the presence of an in-plane magnetic field
Authors
Zhu, JXWang, ZDGong, CD
KeywordsPhysics engineering
Issue Date1996
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1996, v. 80 n. 4, p. 2291-2295 How to Cite?
DOI: http://dx.doi.org/10.1063/1.363058
AbstractUsing the asymptotic transfer-matrix method, we investigate me resonant tunneling of holes in double-barrier semiconductor structures in the presence of an in-plane magnetic field. The transmission coefficients including ll (light to light hole), hl (light to heavy hole), hh (heavy to heavy hole), and lh (heavy to light hote) are calculated as a function of energy. As in the case of nonzero parallel wave vectors, the mixing of note tunneling can also occur due to the in-plane magnetic field. Moreover, as has been observed by resonant magnetotunneling spectroscopy, we also find that the different resonances have quite different magnetic-field dependences. © 1996 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42437
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:A1996VD53200045
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhu, JXen_HK
dc.contributor.authorWang, ZDen_HK
dc.contributor.authorGong, CDen_HK
dc.date.accessioned2007-01-29T08:50:01Z-
dc.date.available2007-01-29T08:50:01Z-
dc.date.issued1996en_HK
dc.identifier.citationJournal of Applied Physics, 1996, v. 80 n. 4, p. 2291-2295-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42437-
dc.description.abstractUsing the asymptotic transfer-matrix method, we investigate me resonant tunneling of holes in double-barrier semiconductor structures in the presence of an in-plane magnetic field. The transmission coefficients including ll (light to light hole), hl (light to heavy hole), hh (heavy to heavy hole), and lh (heavy to light hote) are calculated as a function of energy. As in the case of nonzero parallel wave vectors, the mixing of note tunneling can also occur due to the in-plane magnetic field. Moreover, as has been observed by resonant magnetotunneling spectroscopy, we also find that the different resonances have quite different magnetic-field dependences. © 1996 American Institute of Physics.en_HK
dc.format.extent118279 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1996, v. 80 n. 4, p. 2291-2295 and may be found at https://doi.org/10.1063/1.363058-
dc.subjectPhysics engineeringen_HK
dc.titleResonant tunneling of holes in double-barrier structures in the presence of an in-plane magnetic fielden_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=80&issue=4&spage=2291&epage=2295&date=1996&atitle=Resonant+tunneling+of+holes+in+double-barrier+structures+in+the+presence+of+an+in-plane+magnetic+fielden_HK
dc.identifier.emailWang, ZD: zwang@hkucc.hku.hken_HK
dc.identifier.authorityWang, ZD=rp00802en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.363058en_HK
dc.identifier.scopuseid_2-s2.0-0042827159en_HK
dc.identifier.hkuros20909-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0042827159&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume80en_HK
dc.identifier.issue4en_HK
dc.identifier.spage2291en_HK
dc.identifier.epage2295en_HK
dc.identifier.isiWOS:A1996VD53200045-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhu, JX=7405688302en_HK
dc.identifier.scopusauthoridWang, ZD=14828459100en_HK
dc.identifier.scopusauthoridGong, CD=7102694459en_HK
dc.identifier.issnl0021-8979-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats