File Download
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1063/1.359762
- Scopus: eid_2-s2.0-3743055233
- WOS: WOS:A1995RW89200071
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Interfacial Fermi level and surface band bending in Ni/semi-insulating GaAs contact
Title | Interfacial Fermi level and surface band bending in Ni/semi-insulating GaAs contact |
---|---|
Authors | |
Keywords | Physics engineering |
Issue Date | 1995 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 1995, v. 78 n. 7, p. 4796-4798 How to Cite? |
Abstract | For nickel on the chemically clean surface of undoped semi-insulating GaAs at room temperature, an upward surface band bending of 0.062 eV and a barrier height of 0.690 eV have been observed by the photovoltage and the internal photoemission techniques, respectively. The observed surface band bending is in excellent agreement with its predicted value, and the observed barrier height also agrees very well with its value from the very careful analysis of reversed I-V data. It has been determined that the interfacial Fermi level lies at 0.690 eV below the GaAs conduction band minimum at the interface. The interfacial Fermi level is found to coincide with the energy level of the EL2 native defect, indicating the importance of the EL2 in the Fermi level pinning at the interface. © 1995 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/42228 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, TP | en_HK |
dc.contributor.author | Liu, YC | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.date.accessioned | 2007-01-08T02:32:01Z | - |
dc.date.available | 2007-01-08T02:32:01Z | - |
dc.date.issued | 1995 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 1995, v. 78 n. 7, p. 4796-4798 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/42228 | - |
dc.description.abstract | For nickel on the chemically clean surface of undoped semi-insulating GaAs at room temperature, an upward surface band bending of 0.062 eV and a barrier height of 0.690 eV have been observed by the photovoltage and the internal photoemission techniques, respectively. The observed surface band bending is in excellent agreement with its predicted value, and the observed barrier height also agrees very well with its value from the very careful analysis of reversed I-V data. It has been determined that the interfacial Fermi level lies at 0.690 eV below the GaAs conduction band minimum at the interface. The interfacial Fermi level is found to coincide with the energy level of the EL2 native defect, indicating the importance of the EL2 in the Fermi level pinning at the interface. © 1995 American Institute of Physics. | en_HK |
dc.format.extent | 318035 bytes | - |
dc.format.extent | 9781 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.rights | Copyright 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1995, v. 78 n. 7, p. 4796-4798 and may be found at https://doi.org/10.1063/1.359762 | - |
dc.subject | Physics engineering | en_HK |
dc.title | Interfacial Fermi level and surface band bending in Ni/semi-insulating GaAs contact | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=78&issue=7&spage=4796&epage=4798&date=1995&atitle=Interfacial+Fermi+level+and+surface+band+bending+in+Ni/semi-+insultating+GaAs+contact | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.359762 | en_HK |
dc.identifier.scopus | eid_2-s2.0-3743055233 | en_HK |
dc.identifier.hkuros | 9246 | - |
dc.identifier.volume | 78 | en_HK |
dc.identifier.issue | 7 | en_HK |
dc.identifier.spage | 4796 | en_HK |
dc.identifier.epage | 4798 | en_HK |
dc.identifier.isi | WOS:A1995RW89200071 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Chen, TP=36442234400 | en_HK |
dc.identifier.scopusauthorid | Liu, YC=7410214740 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.issnl | 0021-8979 | - |