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Article: Experimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodes

TitleExperimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodes
Authors
Huang, YChen, XDFung, SBeling, CDLing, CC
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2003, v. 94 n. 9, p. 5771-5775 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1615705
AbstractThe influence of screw dislocations on the performance of Au/n-GaN Schottky diodes was investigated. The current-voltage (I-V) characteristics of the diodes fabricated on different GaN templates grown by metallorganic chemical vapor deposition on sapphire substrates were studied. It was shown that these dislocations result in the lowering of the barrier height in the localized regions.
Persistent Identifierhttp://hdl.handle.net/10722/42219
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000186138600047
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorLing, CCen_HK
dc.date.accessioned2007-01-08T02:31:51Z-
dc.date.available2007-01-08T02:31:51Z-
dc.date.issued2003en_HK
dc.identifier.citationJournal of Applied Physics, 2003, v. 94 n. 9, p. 5771-5775-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42219-
dc.description.abstractThe influence of screw dislocations on the performance of Au/n-GaN Schottky diodes was investigated. The current-voltage (I-V) characteristics of the diodes fabricated on different GaN templates grown by metallorganic chemical vapor deposition on sapphire substrates were studied. It was shown that these dislocations result in the lowering of the barrier height in the localized regions.en_HK
dc.format.extent108235 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2003, v. 94 n. 9, p. 5771-5775 and may be found at https://doi.org/10.1063/1.1615705-
dc.subjectPhysics engineeringen_HK
dc.titleExperimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=94&issue=9&spage=5771&epage=5775&date=2003&atitle=Experimental+study+and+modeling+of+the+influence+of+screw+dislocations+on+the+performance+of+Au/n-GaN+Schottky+diodesen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1615705en_HK
dc.identifier.scopuseid_2-s2.0-0242468551en_HK
dc.identifier.hkuros84964-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0242468551&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume94en_HK
dc.identifier.issue9en_HK
dc.identifier.spage5771en_HK
dc.identifier.epage5775en_HK
dc.identifier.isiWOS:000186138600047-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHuang, Y=26643004400en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.issnl0021-8979-

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