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Article: Electron-irradiation-induced deep levels in n-type 6H–SiC

TitleElectron-irradiation-induced deep levels in n-type 6H–SiC
Authors
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1999, v. 85 n. 11, p. 7604-7608 How to Cite?
AbstractThe fluence-dependent properties and the annealing behavior of electron-irradiation-induced deep levels in n-type 6H–SiC have been studied using deep-level transient spectroscopy (DLTS). Sample annealing reveals that the dominant DLTS signal at EC – 0.36 eV (labeled as E1 by others) consists of two overlapping deep levels (labeled as ED3L and ED3H). The breakup temperature of the defect ED3L is about 700 °C. The ED3H center together with another deep level located at EC – 0.44 eV (so-called E2) can withstand high-temperature annealing up to 1600 °C. It is argued that the involvement of the defect ED3L is the reason that various concentration ratios of E1/E2 were observed in the previous work. The revised value of the capture cross section of the deep-level ED3H has been measured after removing ED3L by annealing. A deep level found at EC – 0.50 eV is identified as a vacancy–impurity complex since it was found to have a lower saturated concentration and weak thermal stability. Two other deep levels, EC – 0.27 eV and EC – 0.32 eV, which were not observed by others because of the carrier freeze-out effect, are also reported. ©1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42190
ISSN
2019 Impact Factor: 2.286
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorGong, Men_HK
dc.contributor.authorFung, SHYen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorYou, Zen_HK
dc.date.accessioned2007-01-08T02:31:19Z-
dc.date.available2007-01-08T02:31:19Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal of Applied Physics, 1999, v. 85 n. 11, p. 7604-7608-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42190-
dc.description.abstractThe fluence-dependent properties and the annealing behavior of electron-irradiation-induced deep levels in n-type 6H–SiC have been studied using deep-level transient spectroscopy (DLTS). Sample annealing reveals that the dominant DLTS signal at EC – 0.36 eV (labeled as E1 by others) consists of two overlapping deep levels (labeled as ED3L and ED3H). The breakup temperature of the defect ED3L is about 700 °C. The ED3H center together with another deep level located at EC – 0.44 eV (so-called E2) can withstand high-temperature annealing up to 1600 °C. It is argued that the involvement of the defect ED3L is the reason that various concentration ratios of E1/E2 were observed in the previous work. The revised value of the capture cross section of the deep-level ED3H has been measured after removing ED3L by annealing. A deep level found at EC – 0.50 eV is identified as a vacancy–impurity complex since it was found to have a lower saturated concentration and weak thermal stability. Two other deep levels, EC – 0.27 eV and EC – 0.32 eV, which were not observed by others because of the carrier freeze-out effect, are also reported. ©1999 American Institute of Physics.en_HK
dc.format.extent96906 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physics-
dc.rightsCopyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1999, v. 85 n. 11, p. 7604-7608 and may be found at https://doi.org/10.1063/1.370561-
dc.subjectPhysics engineeringen_HK
dc.titleElectron-irradiation-induced deep levels in n-type 6H–SiCen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=85&issue=11&spage=7604&epage=7608&date=1999&atitle=Electron-irradiation-induced+deep+levels+in+n-type+6H–SiCen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.370561en_HK
dc.identifier.scopuseid_2-s2.0-0001671118-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0001671118&selection=ref&src=s&origin=recordpage-
dc.identifier.volume85-
dc.identifier.issue11-
dc.identifier.spage7604-
dc.identifier.epage7608-
dc.identifier.isiWOS:000080354300016-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridGong, M=9273057400-
dc.identifier.scopusauthoridFung, S=7201970040-
dc.identifier.scopusauthoridBeling, CD=7005864180-
dc.identifier.scopusauthoridYou, Z=7102207882-
dc.identifier.issnl0021-8979-

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